MMBF170LT1 vs BSS138LT1G 比較

詳細並排比較 MMBF170LT1 由 onsemi 與 BSS138LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 MMBF170LT1 BSS138LT1G
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer onsemi (ON Semiconductor) —
Part Number MMBF170LT1 —
電晶體類型 N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) 200 mA (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
工作溫度範圍 -55 °C to +150 °C (TJ max per datasheet) —
封裝 / 外殼 SOT-23-3 (TO-236) —
安裝類型 Surface Mount Surface Mount
腳位數 3 —
RoHS 狀態 Compliant (per onsemi product page) Compliant (RoHS Compliant and Pb-free per Easybom)
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS —
Polarity N-Channel —
Drain-Source Voltage (VDS) — 50 V
Power Dissipation (PD) — 225 mW (Ta)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Configuration — Single FET
Channel Mode — Enhancement Mode
封裝 — SOT-23-3 (TO-236)
工作溫度 — [DATA_NEEDED: operating temperature range]
Product Family — BSS138LT Series Small Signal MOSFET
Typical Applications — Computers, printers, cordless phones, DC-DC converters

資料表與資源

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