MRF18030BLSR3 vs MRF18060BLSR3 比較

詳細並排比較 MRF18030BLSR3 由 NXP Semiconductors 與 MRF18060BLSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF18030BLSR3 MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP

MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP

MRF18030BLSR3 ✓ 啟用中
NXP Semiconductors
MRF18060BLSR3 MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF18060BLSR3 ⚠ 最後購買機會

規格比較

參數 MRF18030BLSR3 MRF18060BLSR3
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 最後購買
Manufacturer Analog Devices / NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale/Motorola)
Part Number MRF18030BLSR3 —
電晶體類型 N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) Lateral N-Channel Enhancement-Mode MOSFET
Technology LDMOS, laterally diffused metal-oxide-semiconductor —
Configuration Single, common-source RF power transistor Single N-channel
Operating Frequency Range 1.8 GHz to 2 GHz (specified 1930-1990 MHz) —
Target Application Band GSM / GSM-EDGE / DCS-1900 / PCS-1900 —
Drain-Source Voltage (VDSS) 26 V typical operating 26 V
Output Power (Pout) 30 W (CW or pulsed, in-band) 60 W CW
Power Gain 14 dB typical at 2 GHz —
Drain Efficiency [DATA_NEEDED: typical drain efficiency %] [DATA_NEEDED: drain efficiency percentage]
Maximum Power Dissipation (Abs) 83.3 W —
Operating Mode Enhancement Mode —
Drain Current (Id) at test condition 250 mA (quiescent / small-signal reference) —
封裝 NI-400S (CASE 465E-04, Style 1), ceramic surface mount —
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Per NXP product page (verify with current data) —
Storage Temperature [DATA_NEEDED: storage temperature range] —
工作接面溫度 [DATA_NEEDED: max junction temperature C] —
Frequency Range — 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational)
Test Voltage (VDD) — 26 V
Power Gain (Gps) — 13 dB (typical)
Maximum Power Dissipation (Absolute) — 180 W
Maximum Drain Current — [DATA_NEEDED: maximum DC drain current]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
封裝 / 外殼 — NI-780S (CASE 465-06, Style 1), ceramic surface-mount
Peak Reflow Temperature — 260 C
MSL 等級 — [DATA_NEEDED: MSL rating]
RoHS 狀態 — [DATA_NEEDED: RoHS compliance]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價