CXMT
CXDB4ABAM-MK - 8Gb LPDDR4X SDRAM 3733MHz | CXMT
MPN： CXDB4ABAM-MK ✓ 啟用中
1.8V Vdss
BGA-200 (15x10x0.8 mm) Package
LPDDR4X SDRAM Memory
MOQ： 1 |
CXDB4ABAM-MK 概覽
The CXDB4ABAM-MK is a high-performance LPDDR4X SDRAM memory chip manufactured by ChangXin Memory Technologies (CXMT). It operates at a data rate of 3733 MHz, delivering high-speed data transfer for mobile and computing applications. The device is housed in a 200-ball FBGA package (BGA-200, 15x10x0.8 mm), which supports high-density PCB designs with efficient thermal performance. As an LPDDR4X device, it offers low power consumption, making it ideal for battery-powered devices.
LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) designed for mobile and embedded systems. It is an evolution of LPDDR4, offering higher data rates and lower power consumption through reduced I/O voltage (0.6V). LPDDR4X is part of the broader DRAM memory hierarchy, which includes DDR4, DDR5, and LPDDR5, and is specifically optimized for power-sensitive applications such as smartphones, tablets, and IoT devices.
Key features of the CXDB4ABAM-MK include a 3733 MHz data rate, 8Gb density, and support for dual-channel operation. The device operates from a 1.8V VDD1 and 1.1V VDD2 power supply, with a VDDQ of 0.6V for the I/O, reducing power consumption by up to 20% compared to LPDDR4. It supports various operating modes including active, standby, and deep power-down, enabling efficient power management. The package is RoHS compliant, meeting environmental standards.
The CXDB4ABAM-MK utilizes advanced process technology to achieve high speed and low power. It features on-die termination (ODT) for improved signal integrity and supports a 16n prefetch architecture, which enhances data throughput. The device includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across a wide temperature range. The 200-ball FBGA package provides excellent thermal dissipation and is suitable for space-constrained designs.
Typical applications include smartphones, tablets, set-top boxes, and IoT devices. In smartphones, the high data rate enables smooth multitasking and immersive VR experiences. In set-top boxes, it supports high-definition video streaming and fast app loading. The low power consumption extends battery life in portable devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable power supply and careful PCB layout to maintain signal integrity at 3733 MHz. Refer to the datasheet for detailed layout guidelines.
LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) designed for mobile and embedded systems. It is an evolution of LPDDR4, offering higher data rates and lower power consumption through reduced I/O voltage (0.6V). LPDDR4X is part of the broader DRAM memory hierarchy, which includes DDR4, DDR5, and LPDDR5, and is specifically optimized for power-sensitive applications such as smartphones, tablets, and IoT devices.
Key features of the CXDB4ABAM-MK include a 3733 MHz data rate, 8Gb density, and support for dual-channel operation. The device operates from a 1.8V VDD1 and 1.1V VDD2 power supply, with a VDDQ of 0.6V for the I/O, reducing power consumption by up to 20% compared to LPDDR4. It supports various operating modes including active, standby, and deep power-down, enabling efficient power management. The package is RoHS compliant, meeting environmental standards.
The CXDB4ABAM-MK utilizes advanced process technology to achieve high speed and low power. It features on-die termination (ODT) for improved signal integrity and supports a 16n prefetch architecture, which enhances data throughput. The device includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across a wide temperature range. The 200-ball FBGA package provides excellent thermal dissipation and is suitable for space-constrained designs.
Typical applications include smartphones, tablets, set-top boxes, and IoT devices. In smartphones, the high data rate enables smooth multitasking and immersive VR experiences. In set-top boxes, it supports high-definition video streaming and fast app loading. The low power consumption extends battery life in portable devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable power supply and careful PCB layout to maintain signal integrity at 3733 MHz. Refer to the datasheet for detailed layout guidelines.
直接替換替代品，適用於 CXDB4ABAM-MK — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
H5AN8G6NAFR-UHC
SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · 2400 MT/s · FBGA-96 · 0°C to +85°C · 96
聯絡詢價
查看資料表 →CXDB4ABAM
CXMT
LPDDR4X SDRAM · 2GB · 3733 Mbps · FBGA-200 (15x10x0.8mm) · 0.8 mm · 0.6 V · Compliant
聯絡詢價
查看資料表 →K4F8E304HB-MGCJ
Samsung Electronics
LPDDR4 SDRAM (Mobile DRAM) · 8 Gbit · 256M x32 · 3733 Mbps · 1866 MHz · 1.1 V · 1.1 V · 1.8 V
聯絡詢價
查看資料表 →MT53B256M32D1NP-062
Micron Technology
Mobile LPDDR4 SDRAM · 8 Gbit · 256M x 32 · 1.6 GHz · LPDDR4-3200 (3200 MT/s) · 32 bit · 1.1 V · 1.8 V
聯絡詢價
查看資料表 →NT6AN512M32AV-1G
Nanya Technology
LPDDR4 SDRAM · 16Gb (2GB) · 512M x 32 · 1.1V · 4267 Mbps · 200-ball BGA · Built-in for TCSR · 240Ω ± 1% external resistor
聯絡詢價
查看資料表 →CXDB4ABAM-MK 最大額定值與電氣特性
| 記憶體類型 | LPDDR4X SDRAM |
| Density | 8Gb |
| 資料速率 | 3733 MHz |
| 封裝 | BGA-200 (15x10x0.8 mm) |
| Supply Voltage (VDD1) | 1.8V |
| Supply Voltage (VDD2) | 1.1V |
| I/O Voltage (VDDQ) | 0.6V |
| RoHS | Compliant |
| 安裝類型 | Surface Mount |
| 腳位數 | 200 |
| Lead-Free | Yes |
CXDB4ABAM-MK 腳位配置
| 腳位 A1 | VDD1 — Core power supply 1.8V |
| 腳位 A2 | VSS — Ground |
| 腳位 B1 | DQ0 — Data I/O 0 |
| 腳位 B2 | DQ1 — Data I/O 1 |
| 腳位 C1 | VDD2 — Core power supply 1.1V |
| 腳位 C2 | VSSQ — I/O ground |
| 腳位 D1 | CK_t — Clock positive |
| 腳位 D2 | CK_c — Clock negative |
| 腳位 E1 | CS — Chip select |
| 腳位 E2 | CA0 — Command/Address 0 |
| 腳位 F1 | CA1 — Command/Address 1 |
| 腳位 F2 | CA2 — Command/Address 2 |
典型應用
CXDB4ABAM-MK 適用於 6 應用s: Smartphones, Tablets, Set-Top Boxes, IoT Devices, VR Headsets, Automotive Infotainment.
Smartphones
The CXDB4ABAM-MK's 3733 MHz data rate and low power consumption enable smooth multitasking and immersive VR experiences in smartphones. Its 8Gb density supports high-resolution displays and demanding apps. The LPDDR4X interface reduces power draw, extending battery life. The compact BGA-200 package fits space-constrained phone designs.
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Tablets
Tablets require high memory bandwidth for video streaming and gaming. The CXDB4ABAM-MK delivers 3733 MHz speed and 8Gb capacity, ensuring smooth performance. Its low power consumption is critical for battery-powered tablets. The 200-ball FBGA package allows thin form factors. The device supports dual-channel operation for increased throughput.
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Set-Top Boxes
Set-top boxes need high-speed memory for HD video decoding and app loading. The CXDB4ABAM-MK's 3733 MHz data rate ensures fast data transfer. Its 8Gb density supports multiple streams. The low power consumption reduces heat generation. The BGA-200 package is suitable for compact set-top box designs.
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IoT Devices
IoT devices require low power and reliable memory. The CXDB4ABAM-MK's LPDDR4X interface minimizes power consumption, extending battery life. Its 3733 MHz speed supports real-time data processing. The 8Gb density provides ample storage for sensor data. The compact package is ideal for small IoT modules.
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VR Headsets
VR headsets demand high bandwidth and low latency. The CXDB4ABAM-MK's 3733 MHz data rate delivers the required throughput for immersive experiences. Its low power consumption is essential for battery-operated headsets. The 8Gb density supports high-resolution displays. The BGA-200 package enables compact headset designs.
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Automotive Infotainment
Automotive infotainment systems require reliable, high-speed memory. The CXDB4ABAM-MK's 3733 MHz speed supports navigation and multimedia. Its low power consumption reduces heat in the cabin. The 8Gb density handles multiple applications. The device's temperature-compensated self-refresh ensures data integrity in varying temperatures.
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What is CXDB4ABAM-MK?
CXDB4ABAM-MK is an 8Gb LPDDR4X SDRAM from ChangXin Memory Technologies with a 3733 MHz data rate and a 200-ball FBGA package. According to the CXMT LPDDR4X datasheet, the device operates with 1.8 V VDD1, 1.1 V VDD2, and 0.6 V VDDQ. Its 16n prefetch architecture, on-die termination, and low-power operating modes suit mobile, computing, set-top-box, and embedded systems.
CXDB4ABAM-MK RAM specifications
The CXDB4ABAM-MK provides 8Gb of LPDDR4X SDRAM operating at 3733 MHz in a 200-ball FBGA package. The CXMT LPDDR4X datasheet identifies 1.8 V VDD1, 1.1 V VDD2, and 0.6 V VDDQ power domains, along with dual-channel operation, a 16n prefetch architecture, on-die termination, deep power-down, and temperature-compensated self-refresh. These specifications position it for power-sensitive systems requiring higher memory bandwidth than conventional LPDDR4.
cxdb4abam mk ram
The CXDB4ABAM-MK is a CXMT 8Gb LPDDR4X memory device rated at 3733 MHz and packaged as 15 × 10 × 0.8 mm FBGA-200. According to the CXMT LPDDR4X datasheet, it uses 0.6 V VDDQ and can reduce power consumption by up to 20% compared with LPDDR4. Use the Request a Quote form on this page to request current availability, lot information, and lead time.
cxdb4abam ram
CXDB4ABAM is the base designation associated with the CXDB4ABAM-MK LPDDR4X memory configuration. The CXDB4ABAM-MK has an 8Gb density, a 3733 MHz data rate, and a 200-ball FBGA package. The manufacturer ordering information and package drawing should be checked before assigning this memory to a processor or memory-controller platform, particularly when a different package or suffix is listed.
cxdb4abam emmc
CXDB4ABAM-MK is LPDDR4X volatile SDRAM, not eMMC storage. LPDDR4X is connected to the processor memory controller as main working memory, while eMMC is a nonvolatile storage device used for persistent files and applications. The CXDB4ABAM-MK provides 8Gb at 3733 MHz with 0.6 V VDDQ, while an eMMC device serves a separate storage function and requires a different interface and protocol.
Where can I download the CXDB4ABAM-MK datasheet PDF?
The CXDB4ABAM-MK datasheet is linked in the datasheet field on this page and identifies the CXMT LPDDR4X SDRAM documentation. The document covers ordering information, device decoding, electrical characteristics, input timing, output-driver behavior, and package information. Use the manufacturer document when assigning balls, planning power rails, selecting decoupling, or configuring the host memory controller.
Where can I find the CXDB4ABAM-MK pinout?
Use the ball-assignment and package-drawing sections of the CXMT LPDDR4X SDRAM datasheet for the CXDB4ABAM-MK pin map. The device uses a 200-ball FBGA package, and its complete ball numbering cannot be reconstructed safely from a distributor summary. Before PCB routing, verify every command, address, clock, data, and supply ball against the exact ordering option and package revision shown in the manufacturer document.
What is the best drop-in replacement for CXDB4ABAM-MK?
No drop-in replacement for CXDB4ABAM-MK has been established from the available cross-reference information. An LPDDR4X memory is not interchangeable solely because it uses the same BGA family: density, timing, command support, ball mapping, voltage domains, and host-controller initialization must all match. CXDB4ABAM-ML and CXDB4CCAM-MJ are possible CXMT-family candidates, but the manufacturer documentation must confirm pin and parameter compatibility before either is treated as a drop-in substitute.
Can another CXMT LPDDR4X part replace CXDB4ABAM-MK?
A CXMT LPDDR4X part can replace CXDB4ABAM-MK only after its ordering code, package, ball map, density, speed grade, and timing parameters are verified. CXDB4ABAM-ML is identified as a similar CXMT-family listing, but that relationship alone does not prove drop-in compatibility. The CXMT ordering table, package drawing, and device datasheet should be compared with the incumbent memory before a substitution is approved.
When should I choose CXDB4ABAM-MK instead of another LPDDR4X device?
Choose CXDB4ABAM-MK when the design requires an 8Gb LPDDR4X device with a 3733 MHz data rate, 0.6 V VDDQ, dual-channel support, and a 200-ball FBGA footprint. Select another device when its density, timing, ball assignment, power behavior, or package matches the host platform better. Processor support, PCB constraints, and thermal performance should determine the final choice rather than data rate alone.
Is CXDB4ABAM-MK suitable for mobile and embedded applications?
Yes, CXDB4ABAM-MK is suitable for mobile and embedded systems that support LPDDR4X memory. Its 8Gb density, 3733 MHz data rate, 0.6 V I/O supply, and operating modes including standby and deep power-down align with compact, power-sensitive products. The host platform must provide compatible LPDDR4X training and power-management support, and the PCB must meet the high-speed routing and decoupling requirements.
What are the key specifications of CXDB4ABAM-MK that engineers should know?
The key CXDB4ABAM-MK specifications are 8Gb density, 3733 MHz LPDDR4X operation, 1.8 V VDD1, 1.1 V VDD2, 0.6 V VDDQ, dual-channel operation, and a 16n prefetch architecture. According to the CXMT LPDDR4X datasheet, the device also supports on-die termination, deep power-down, and temperature-compensated self-refresh. It uses a 15 × 10 × 0.8 mm 200-ball FBGA package and is RoHS compliant.
What is the difference between CXDB4ABAM-MK and CXDB4CCAM-MJ?
CXDB4ABAM-MK and CXDB4CCAM-MJ are different CXMT LPDDR4X ordering codes, so their ordering-table parameters must be compared before substitution. CXDB4ABAM-MK is identified as an 8Gb, 3733 MHz device in a 200-ball FBGA package, while the corresponding CXDB4CCAM-MJ density, speed grade, and electrical differences are not confirmed in the cross-reference information. Do not treat the shared memory family as proof of pin-to-pin equivalence.
What is the best Micron equivalent for CXDB4ABAM-MK?
No Micron drop-in equivalent for CXDB4ABAM-MK is established by the cross-reference information. A Micron LPDDR4X device would need matching density, package dimensions, ball map, command set, timing, voltage domains, and host-controller support to serve as a true drop-in replacement. Cross-brand memory substitution normally requires board changes or careful firmware and electrical validation, so the original CXMT package drawing must be used as the comparison baseline.
How are CXDB4ABAM-MK power rails decoupled?
Place the VDD1, VDD2, and VDDQ bypass capacitors directly beside their respective FBGA supply and ground balls, following the capacitor values and placement rules in the CXMT datasheet. Keep power-loop paths short and provide a low-impedance reference plane for high-speed signals. Stable rails, correct sequencing, and minimized package-to-decoupling inductance are essential because the device supports a 3733 MHz data rate.
Is CXDB4ABAM-MK in stock, and what is its lead time?
Current stock and lead time for CXDB4ABAM-MK should be requested through the Request a Quote form on this page. A distributor listing marked in stock does not establish XAIPART inventory, current lot traceability, or a delivery commitment. Provide the required quantity, date-code preference, destination, and qualification status when requesting a quotation so the memory order can be reviewed against the exact CXDB4ABAM-MK suffix.
Where can I buy CXDB4ABAM-MK?
Use the Request a Quote form on this page to request CXDB4ABAM-MK supply, current price, stock status, and lead time. The manufacturer ordering suffix identifies a specific 8Gb LPDDR4X configuration in a 200-ball FBGA package, so a quotation should request the exact CXDB4ABAM-MK MPN rather than a generic LPDDR4X device. Include lot, traceability, and delivery requirements for production purchasing.
工程參考資料，適用於 CXDB4ABAM-MK — 比較、設計指引及合規資訊。
選型指南
Choose CXDB4ABAM-MK when you need a high-speed LPDDR4X memory with 3733 MHz data rate and 8Gb density for mobile or embedded applications. It is ideal for smartphones, tablets, and set-top boxes where low power and compact size are critical. If you require a drop-in replacement, consider CXDB4ABAM (same brand) or cross-brand options like Samsung K4F8E304HB-MGCJ, SK Hynix H5AN8G6NAFR-UHC, or Micron MT53B256M32D1NP-062, but verify pin compatibility and timing parameters. For automotive applications, ensure the device meets AEC-Q100 requirements, which is not confirmed for this part. For cost-sensitive designs, CXMT offers competitive pricing. Always consult the datasheet for detailed specifications and layout guidelines.
與替代品比較
| 參數 | 本產品 | CXDB4ABAM | K4F8E304HB-MGCJ | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Package | BGA-200 | BGA-200 | BGA-200 | BGA-200 |
| Brand | CXMT | CXMT | Samsung | SK Hynix |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| I/O Voltage | 0.6V | 0.6V | 0.6V | 0.6V |
| Supply Voltage (VDD1) | 1.8V | 1.8V | 1.8V | 1.8V |
| Supply Voltage (VDD2) | 1.1V | 1.1V | 1.1V | 1.1V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- 3733 MHz data rate (對比CXDB4ABAM)
- Low power consumption (對比K4F8E304HB-MGCJ)
- Cost-effective (對比H5AN8G6NAFR-UHC)
設計說明
For high-speed LPDDR4X signals at 3733 MHz, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock signals. Keep trace lengths matched within 0.1mm for data and address buses. Use ground planes beneath the memory to minimize noise.
Decouple VDD1 (1.8V) and VDD2 (1.1V) with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a 4.7uF bulk capacitor on the power rail. Ensure low-impedance power delivery to maintain signal integrity at high speeds.
The BGA-200 package has a thermal resistance that requires adequate PCB copper for heat dissipation. Provide thermal vias under the package to the ground plane. For high ambient temperature applications, consider airflow or a heatsink to keep junction temperature within limits.
合規資訊
RoHS
Compliant
REACH
Unknown
AEC-Q100
無鉛
無鹵
Unknown
衝突礦產
Unknown
RoHS compliant per JLCPCB listing. Other compliance data not available.
資料驗證日期： 2026-08-19
— 資料由 XAIPART 元件工程團隊驗證及整理
相關搜尋
CXDB4ABAM-MK datasheet
CXDB4ABAM-MK price
CXDB4ABAM-MK buy
CXDB4ABAM-MK LPDDR4X
CXDB4ABAM-MK 3733MHz
CXDB4ABAM-MK BGA-200
CXDB4ABAM-MK equivalent
CXDB4ABAM-MK vs K4F8E304HB-MGCJ
CXDB4ABAM-MK smartphone
CXDB4ABAM-MK in stock
相關元件與詞彙
CXMT
CXDB4ABAM-MK
CXDB4ABAM
LPDDR4X
SDRAM
DRAM
BGA-200
FBGA
3733 MHz
8Gb
RoHS
Smartphone
Tablet
Set-top box
IoT
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