H5CG48MEBDX018 - DDR5 16Gb 4800Mbps DRAM | SK Hynix
MPN： H5CG48MEBDX018 ✓ 啟用中H5CG48MEBDX018 概覽
DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random access memory, the dominant main-memory technology in servers, workstations, desktops, and embedded compute modules. Within the memory hierarchy, DDR5 sits above LPDDR (low-power variants for mobile) and GDDR (graphics variants), and is the standard JEDEC-defined DRAM interface for high-bandwidth compute systems.
Key features include the 16 Gbit density per die (2G x16 x 8 organization equivalent, 2G x8 bus), a 4800 Mbps data rate, and the DDR5 on-die ECC (ODECC) architecture that improves reliability versus DDR4. The 1.1V core supply reduces per-bit power consumption compared with the 1.2V DDR4 generation, while the on-PDIMM power management architecture moves PMIC functions off the DRAM die, improving signal integrity and efficiency.
Technically, the H5CG48MEBDX018 belongs to SK hynix DDR5 SDRAM family; part numbering indicates an M-die generation at the 4800 class speed grade with an 8-bit bus width. The DDR5 interface uses two independent 32-bit sub-channels per module, improving effective concurrency versus the single 64-bit channel of DDR4.
Typical applications include PC and workstation DIMMs/Ultra-DIMMs, embedded compute and edge-AI modules, networking equipment line cards, and industrial systems requiring high-density main memory.
A key design consideration: DDR5 routing requires careful length matching of DQ/CA and DQS byte lanes, and on-die ECC must be enabled at the memory controller level.
This page synthesizes distributor pricing, drop-in alternatives within the SK hynix DDR5 family, and practical sourcing guidance not found in the manufacturer datasheet.
直接替換替代品，適用於 H5CG48MEBDX018 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5CG48MEBDX018 （相同外形與佔位） — 差異在於 Interface, Data Rate, Package, Organization, RoHS Status.
H5CG48MEBDX014N
✅ 直接替換聯絡詢價
查看資料表 →H5CG48AGBDX018N
✅ 直接替換✗ 缺貨
$87.42 / 單位
查看資料表 →H5CG48AGBDX014N
✅ 直接替換聯絡詢價
查看資料表 →H5CG48AGBDX018
✅ 直接替換✗ 缺貨
$63.9844 / 單位
查看資料表 →H5CG46AGBDX017N
✅ 直接替換聯絡詢價
查看資料表 →H5CG46AGBDX015
✅ 直接替換聯絡詢價
查看資料表 →H5CG48MEBDX018 最大額定值與電氣特性
| 記憶體類型 | DDR5 SDRAM |
| Density | 16 Gbit |
| 組織 | 2G x8 |
| 資料速率 | 4800 Mbps (MT/s) |
| 供應電壓 | 1.1 V |
| Bus Width | 8 bit |
| 介面 | DDR5 SDRAM, double data rate |
| 封裝 | FCBGA, 78-ball (FBGA-78) |
| 安裝類型 | Surface Mount |
| 工作溫度 | 0 C to +85 C |
| On-Die ECC | Yes (DDR5 ODECC) |
| Generation / Die | M-die, 4800 class per SK hynix part numbering |
| Application Class | PC, server, embedded compute main memory |
| RoHS 狀態 | Compliant (per JLCPCB listing) |
| Package Dimensions | Approx. 11 x 10 mm (per JLCPCB BGA-82 11x10 listing) |
H5CG48MEBDX018 approx. 11 x 10 mm (per jlcpcb bga-82 11x10 listing) 腳位配置指南
H5CG48MEBDX018（approx. 11 x 10 mm (per jlcpcb bga-82 11x10 listing) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5CG48MEBDX018.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5CG48MEBDX018 適用於 6 應用s: PC and Workstation Main Memory, Server and Data Center Memory, Embedded Compute and Edge-AI Modules, Networking and Communication Equipment, Industrial Computing and Vision Systems, Consumer Electronics and Set-Top Platforms.
PC and Workstation Main Memory
The H5CG48MEBDX018 is a primary candidate for desktop and workstation DDR5 UDIMM/SODIMM main memory. Its 16Gb density in a 2G x8 organization allows module builders to reach 16 GB on a single-rank x8 module using sixteen components, and its 4800 Mbps data rate matches mainstream Intel and AMD DDR5 memory-controller speed bins. The 1.1V core supply lowers module power versus DDR4-3200 at comparable bandwidth, and on-die ECC reduces soft-error-driven crashes on the die itself. Components are soldered to module PCBs with fly-by CA routing and per-byte DQ termination per JEDEC DDR5 module rules; speed-bin validation against the platform QVL is the main performance consideration.
推薦
Server and Data Center Memory
Server platforms benefit from the H5CG48MEBDX018's 16Gb density and DDR5-4800 bandwidth when populated in RDIMM or motherboard-down memory configurations. The 2G x8 organization is the standard building block for high-capacity channels, and DDR5 on-die ECC plus controller link ECC delivers the reliability levels data center operators require. With 1.1V operation, per-GB power drops versus DDR4, directly reducing data center cooling overhead. In server layouts, multiple ranks per channel stress DQ/DQS length matching and CA routing; following the DDR5 fly-topology rules and per-die ZQ calibration keeps eye diagrams open at 4800 Mbps across all populated slots.
推薦
Embedded Compute and Edge-AI Modules
COM Express, SMARC, and custom edge-AI carrier designs increasingly adopt DDR5, and the H5CG48MEBDX018 provides 16Gb per component at 4800 Mbps - enough to reach 4-8 GB of soldered-down memory with only two to four packages. Its FCBGA package suits dense soldered-down (memory-on-package-adjacent) layouts typical of edge-AI accelerators, and the 1.1V rail integrates cleanly into embedded power trees. On-die ECC improves long-term reliability in always-on industrial edge deployments. Designers should enable controller ODECC support and validate DDR5 training firmware across the target temperature range of the enclosure.
推薦
Networking and Communication Equipment
Switch, router, and 5G baseband line cards use DDR5 components like the H5CG48MEBDX018 for packet buffering, flow tables, and control-plane memory. The 4800 Mbps rate provides the read/write bandwidth required by high-throughput forwarding engines, while 16Gb density supports large flow and FIB tables in a compact BGA footprint. The 0C to +85C commercial range suits controlled telecom environments; equipment targeting harsh outdoor cabinets should verify ambient derating. Layout discipline around DQS strobe matching and clean VDDQ planes is essential to sustain 4800 Mbps traffic patterns under continuous load in multi-rank configurations.
推薦
Industrial Computing and Vision Systems
Industrial PCs, machine-vision controllers, and test-and-measurement platforms use the H5CG48MEBDX018 where high memory bandwidth feeds image sensors and analytics pipelines. DDR5's dual sub-channel architecture and 4800 Mbps per-pin rate give frame-buffer headroom for multi-camera machine vision, and on-die ECC protects against bit errors during 24/7 operation. The RoHS-compliant FCBGA package supports standard reflow assembly used in industrial PCBA lines. Engineers should confirm enclosure temperature keeps the component within its 0C to +85C window, and select 1% or better termination networks per the DDR5 layout guidelines to maintain signal integrity.
推薦
Consumer Electronics and Set-Top Platforms
High-end set-top boxes, smart displays, and gaming-adjacent consumer devices adopt DDR5 components such as the H5CG48MEBDX018 for main memory, benefiting from 16Gb single-die density that reduces component count versus stacked lower-density DDR4. The 4800 Mbps rate supports 4K video decode pipelines and responsive UI workloads, while 1.1V operation contributes to energy-star style power budgets. Consumer designs typically solder the FCBGA directly on the main PCB near the SoC; short, tightly length-matched DQ runs at this data rate are achievable even on cost-sensitive 6-layer boards, making this component practical for volume consumer platforms.
推薦
推薦產品摘要
工程參考資料，適用於 H5CG48MEBDX018 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5CG48MEBDX014N | H5CG48AGBDX018N | H5CG48AGBDX014N | H5CG46AGBDX017N |
|---|---|---|---|---|---|
| Package | FCBGA (FBGA-78), ~11 x 10 mm | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x8 | 2G x8 | 2G x8 | 2G x8 | 2G x8 |
| Data Rate | 4800 Mbps | 4800 Mbps | 5600 Mbps (down-bin usable at 4800) | 4800 Mbps | 4600/4800 class |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Die Generation | M-die (MEBD) | M-die (MEBD) | A-die (AGBD) | A-die (AGBD) | A-die (AGBD) |
| On-Die ECC | Yes (DDR5 ODECC) | Yes (DDR5 ODECC) | Yes (DDR5 ODECC) | Yes (DDR5 ODECC) | Yes (DDR5 ODECC) |
主要差異化特點
- Newest M-die generation within SK hynix DDR5 family (對比H5CG48AGBDX018N)
- 16Gb density in single x8 die (對比Lower-density DDR4 components (e.g., 8Gb class))
- DDR5-4800 speed class with 1.1V operation (對比H5CG46AGBDX017N)
設計說明
At 4800 Mbps, DDR5 DQ/DQS traces require tight intra-byte-lane length matching (typically within a few mils) and controlled-impedance routing (40 ohm for DQ, CA per the DDR5 layout guidelines). Use fly-by CA routing for multi-rank designs and per-die termination as specified in the SK hynix DDR5 component datasheet. Simulate eye diagrams at the corner speed bins before freezing the stack-up; DDR5's higher data rate makes marginal DDR4-era stack-ups fail at 4800 Mbps.
The H5CG48MEBDX018 operates at 1.1V VDD/VDDQ (with VPP for word-line bootstrapping per DDR5 architecture - verify exact rail values in the official datasheet). In soldered-down designs, provide solid VDDQ planes with dense via stitching to the BGA power balls and bulk + 0.1uF/0.01uF decoupling close to each package corner. Estimated: at typical x8 DDR5-4800 operating currents of several hundred mA per component, plan the power tree regulator for at least 0.5 A per die with margin for refresh bursts.
Do not assume DDR4 controller compatibility - DDR5 requires a DDR5 memory controller, different training firmware, and ODECC/link-ECC enablement at the controller level. Also, verify speed-bin suffix coding (X014/X015/X017/X018) against your platform's validated vendor list before swapping die generations: A-die (AGBD) and M-die (MEBD) parts are validated drop-ins per public cross-reference guides, but controller firmware whitelists may need re-testing. Always obtain the official SK hynix datasheet rather than relying on distributor summary tables.
合規資訊
RoHS compliant per JLCPCB listing. Other compliance statuses not stated in provided web data.
