IRLZ34NSTRLPBF vs IRFR5410TRRPBF 比較
詳細並排比較 IRLZ34NSTRLPBF 由 Infineon 與 IRFR5410TRRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLZ34NSTRLPBF | IRFR5410TRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 70 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| 封裝 | D2PAK (TO-263), surface mount | TO-252AA (DPAK) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Polarity | — | P-Channel |
| Technology | — | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| 工作接面溫度 | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |