K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
MPN： K4A8G165WB-BCWE ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $7.61 | $7.61 |
| 10 | $7.3 | $73.00 |
| 100 | $6.95 | $695.00 |
| 500 | $6.6 | $3,300.00 |
| 1,000 | $6.25 | $6,250.00 |
K4A8G165WB-BCWE 概覽
DRAM (Dynamic Random Access Memory) is the mainstream volatile working memory used in virtually every computing system, sitting below CPU caches in speed but far above storage in bandwidth. DDR4 SDRAM, the fourth generation of Double Data Rate synchronous DRAM defined by the JEDEC DDR4 standard, doubles the internal prefetch of DDR3 to 8n, lowers the operating voltage from 1.5V to 1.2V, and increases bank groups to improve effective bandwidth. Within the system hierarchy, DRAM sits between the processor and non-volatile storage (NAND flash), providing the primary working set for operating systems and applications.
Key features of this device include the 8 Gb B-die architecture in a x16 organization, a 3200 Mbps/pin data rate yielding up to 6.4 GB/s per device, and 1.2 V core operation that consumes up to 25% less power than comparable DDR3 parts. The x16 bus width simplifies interface routing for embedded controllers, and the commercial 0C to +85C temperature grade suits consumer, networking, and industrial-computing environments.
Technically, the WB B-die uses an 8n prefetch DDR4 core with bank-group architecture, on-die termination (ODT), DLL for output timing, and programmable CAS latency per the DDR4 JEDEC interface. Power management features include a dedicated VPP rail for word-line boosting and self-refresh modes for standby power reduction.
Typical applications include embedded controller memory subsystems, networking and communication equipment line cards, industrial PCs, set-top boxes, smart TVs, and desktop/commercial computing modules where a soldered-down x16 DDR4 device is preferred over a DIMM module.
When designing with this device, the memory controller must support DDR4-3200 timing at 1.2 V, and signal integrity demands length-matched routing, on-die termination tuning, and VREF training per the controller calibration sequence.
This page synthesizes distributor pricing, pin-compatible Samsung family alternatives, comparison tables, and practical DDR4 layout guidance not found in a single manufacturer datasheet.
直接替換替代品，適用於 K4A8G165WB-BCWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
快速比較工具 — 選擇替代零件進行並排比較：
K4A8G165WB-BCTD
✗ 缺貨
$37 / 單位
查看資料表 →K4A8G165WB-BCRC
✗ 缺貨
$12.57 / 單位
查看資料表 →K4A8G165WB-BCPB
聯絡詢價
查看資料表 →K4A8G165WC-BCWE
✗ 缺貨
$38 / 單位
查看資料表 →K4A8G165WG-BCWE
✗ 缺貨
$29.5313 / 單位
查看資料表 →MT40A512M16HA-083E:B
📋 參考替代品（不在目錄中）
K4A8G165WB-BCWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gb |
| Memory Organization | 512M x 16 |
| 資料速率 | 3200 Mbps/pin |
| 供應電壓 | 1.2 V |
| Access Time | 19 ns |
| 介面 | Parallel |
| 封裝 | 96FBGA |
| 工作溫度 | 0C to +85C |
| 安裝類型 | Surface Mount |
| Memory Format | DRAM (volatile) |
| Technology | DDR4 SDRAM B-die |
| Prefetch | 8n |
| Refresh | Self-refresh supported |
| Termination | On-die termination (ODT) |
K4A8G165WB-BCWE 96fbga 腳位配置指南
K4A8G165WB-BCWE（96fbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4A8G165WB-BCWE.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4A8G165WB-BCWE 適用於 6 應用s: Networking and Communication Equipment, Embedded Industrial Computing, Consumer Electronics and Smart TV, Desktop and Commercial Computing Modules, Video Surveillance and NVR Systems, Test and Measurement Instrumentation.
Networking and Communication Equipment
The K4A8G165WB-BCWE fits router, switch, and gateway line cards that need sustained DDR4-3200 bandwidth for packet buffering and lookup tables. Its 8Gb density in a single 96FBGA device lets designers place 1-2 GB of soldered memory without SO-DIMM sockets, improving reliability in fanless equipment. The x16 organization halves device count versus x8, reducing address/control bus loading and simplifying fly-by routing to the memory controller. The 1.2V rail keeps total board power low for thermally constrained telecom enclosures, while 0C to +85C grading covers typical equipment-room ambient conditions with margin.
推薦
Embedded Industrial Computing
Industrial PCs, HMIs, and edge controllers use soldered-down DDR4 like the K4A8G165WB-BCWE to avoid connector vibration failures. The 8Gb 512M x 16 device provides working memory for Linux-based controllers at DDR4-3200, enough bandwidth for multi-protocol stacks and local analytics. Its 1.2V operation cuts memory subsystem power versus DDR3 by roughly 25%, easing fanless thermal budgets. The commercial 0C to +85C range suits enclosed cabinets; for cold storage floors below 0C, select an industrial temperature variant. Soldered FBGA mounting also removes mechanical stress on memory modules in high-shock environments.
推薦
Consumer Electronics and Smart TV
Set-top boxes, smart TVs, and streaming media players use 8Gb x16 DDR4 for video frame buffering and application memory. The K4A8G165WB-BCWE's 3200 Mbps rate supports 4K video decode pipelines where the SoC memory interface must sustain high sustained bandwidth for frame buffers. The x16 bus matches common TV SoC controllers, and the single-package solution allows compact, low-cost mainboards without memory sockets. 1.2V operation helps meet energy-star style standby targets, and the standard 96FBGA footprint enables a shared PCB design across multiple die revisions (WB/WC/WG) for supply flexibility.
推薦
Desktop and Commercial Computing Modules
Soldered-down DDR4 on COM Express or SoM carrier designs benefits from the K4A8G165WB-BCWE's compact 96FBGA footprint. Populating four devices yields 4GB of on-module memory at DDR4-3200, appropriate for Windows or Linux thin clients, POS terminals, and digital-signage players. The x16 organization lets the CPU's two 64-bit channels be populated with balanced ranks using fewer parts than x8 alternatives, trimming BOM cost. Memory training at 3200 Mbps on commercial chipsets is well supported, and the 1.2V rail integrates cleanly with the module's single high-efficiency buck regulator for the memory domain.
推薦
Video Surveillance and NVR Systems
Network video recorders and multi-channel IP camera hubs require large buffers for ingest and transcode streams, which the 8Gb K4A8G165WB-BCWE supplies at DDR4-3200 bandwidth. Multiple devices around an SoC deliver the multi-GB working sets needed for simultaneous H.265 encode/decode of 16+ channels. The 0C to +85C range fits indoor NVR enclosures, and the FBGA soldered design withstands 24/7 operation vibration better than SODIMMs. Power efficiency at 1.2V matters in always-on security hardware where cumulative energy cost is a purchase criterion, and x16 organization reduces controller routing complexity in dense layouts.
推薦
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep capture memory and fast streaming buffers, which the K4A8G165WB-BCWE's 3200 Mbps interface supports. FPGA- or ASIC-based acquisition engines train DDR4-3200 links to sustain continuous sample streaming to 1 GB or more of soldered DRAM. The x16 organization reduces the number of memory devices per instrument channel bank, shortening fly-by routing and easing timing closure on crowded acquisition boards. Bench instruments operate within 0C to +85C, so the commercial grade suffices, and the 96FBGA's known-good Samsung ball map simplifies FPGA memory-controller reuse across product families.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G165WB-BCWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G165WB-BCTD | K4A8G165WB-BCRC | K4A8G165WC-BCWE | K4A8G165WG-BCWE | MT40A512M16HA-083E |
|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same | B: 96-ball FBGA - JEDEC compatible |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B: Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B: 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B: 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B: 1.2 V |
主要差異化特點
- Full 3200 Mbps speed grade (對比K4A8G165WB-BCRC)
- B-die architecture with broad sibling supply (對比K4A8G165WC-BCWE)
- Supply-chain resilience over cross-brand parts (對比MT40A512M16HA-083E:B)
設計說明
The device requires a 1.2V VDD rail and a separate VPP rail per the DDR4 standard. Decouple with bulk capacitance (e.g. 47-100 uF per device group) plus 100 nF ceramics placed directly under the 96FBGA ball field on the PCB backside. Estimated: at DDR4-3200 burst currents, per-device peak currents can reach ampere-class transients, so design the VRM with adequate transient response and use a solid power plane rather than trace-level feeding.
At 3200 Mbps/pin, DQ-DQS skew budgets are tight. Length-match each DQ to its DQS pair within controller-specified tolerances, keep address/command matched to CK, and reference all high-speed nets to an unbroken ground plane. Tune on-die termination (ODT) and drive-strength settings during memory training; incorrect ODT is the most common cause of eye-diagram failures at DDR4-3200. Run post-layout SI simulation before tape-out, and re-run training across temperature corners.
Do not interchange speed-bin suffixes (WE/RC/PB/TD) without verifying that your memory controller's programmed CAS latency and tRFC timings match the procured bin - a mismatched bin causes boot failures or intermittent errors. Also confirm die revision (WB vs WC vs WG): the ball map is identical, but internal timing differs slightly. For x16 devices, ensure your controller supports the x16 DQS pair (single differential pair per byte lane pair) and 2x refresh behavior options.
合規資訊
RoHS/REACH statements were not present in the retrieved web data; consult Samsung Semiconductor's official compliance documentation for K4A8G165WB-BCWE declarations.
