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Samsung Electronics

K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung

MPN: K4B4G1646D-BYH9 ✓ 啟用中
1.35 V Vdss 96FBGA Package
MOQ: 1 |

K4B4G1646D-BYH9 概覽

The Samsung K4B4G1646D-BYH9 is a 4Gb DDR3L SDRAM memory device organized as 256M x 16 bits across 8 internal banks. It operates at a data rate of 1333 Mbps per pin and is designed for low-voltage applications with a supply voltage of 1.35V. The device is housed in a 96-ball FBGA package and is lead-free and halogen-free, compliant with RoHS regulations.

DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which succeeded DDR2 and is widely used in computing, networking, and embedded systems.

Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports advanced DDR3 features such as posted CAS, programmable CWL, and asynchronous reset. It is designed for high-speed data transfer and is suitable for applications requiring reliable and efficient memory.

The K4B4G1646D-BYH9 uses a 4Gb D-die architecture, which is the fourth generation of Samsung's DDR3 die, offering improved performance and power efficiency. The 96FBGA package provides a compact footprint and excellent thermal characteristics, making it suitable for space-constrained designs.

Typical applications include personal computers, laptops, servers, networking equipment, automotive infotainment systems, and medical devices. Its low-voltage operation makes it ideal for battery-powered and energy-efficient systems.

When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling. The device supports a temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments.

直接替換替代品,適用於 K4B4G1646D-BYH9 — 相同封裝,腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。

此系列的變體

與下列產品可直接替換的同系列型號: K4B4G1646D-BYH9 (相同外形與佔位) — 差異在於 Package, CAS Latency, Operating Temperature, Data Rate, Supply Voltage.

Samsung Electronics
Package: 96-ball FBGA
CAS Latency: 13 (at 1866 Mbps)
Operating Temperature: -40°C to +95°C (TC)
比較對象 K4B4G1646D-BYH9 →
Samsung Electronics
Package: 96-ball FBGA
CAS Latency: Programmable (e.g., 11, 10, 9)
Operating Temperature: 0°C to 85°C
比較對象 K4B4G1646D-BYH9 →
Samsung Electronics
Package: 96-FBGA (BYK)
比較對象 K4B4G1646D-BYH9 →
Micron Technology
Package: 96-FBGA (9x14mm)
CAS Latency: 13 (typical)
Operating Temperature: 0°C to +95°C (Tc)
比較對象 K4B4G1646D-BYH9 →
Micron Technology
Package: 96-FBGA (9x14 mm)
Supply Voltage: 1.35V
比較對象 K4B4G1646D-BYH9 →
Micron Technology
Package: FBGA-96 (9x14 mm)
CAS Latency: 11
Operating Temperature: 0C to +95C (TC)
比較對象 K4B4G1646D-BYH9 →
Nanya Technology
Package: 96-ball FBGA
CAS Latency: 11
Data Rate: 1600 Mbps (PC3-12800)
比較對象 K4B4G1646D-BYH9 →
Winbond
Package: 96-VFBGA (7.5x13 mm)
CAS Latency: 13
Operating Temperature: -40°C to +95°C
比較對象 K4B4G1646D-BYH9 →
Winbond
Package: 96-VFBGA (7.5x13 mm)
CAS Latency: 20 ns
Operating Temperature: -40C to +95C
比較對象 K4B4G1646D-BYH9 →

K4B4G1646E-BYH9

✅ 直接替換 ⚠️ 規格未經驗證
📦 96FBGA
Newer E-die, improved performance

📋 參考替代品(不在目錄中)

K4B4G1646D-BHMA

✅ 直接替換
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1866 Mbps · 1.35 V (1.283 V to 1.45 V) · 96-ball FBGA · -40°C to +95°C (TC) · 13 (at 1866 Mbps)

聯絡詢價

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K4B4G1646D-BCMA

✅ 直接替換
📦 96FBGA
Different speed grade or temperature range

📋 參考替代品(不在目錄中)

K4B4G1646D-BYK0

✅ 直接替換
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · 1.35 V (1.5 V compatible) · 1600 Mbps (PC3-12800) · 96-ball FBGA · 0°C to 85°C · Programmable (e.g., 11, 10, 9)

聯絡詢價

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K4B4G1646E-BYK000

✅ 直接替換
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · DDR3-1600 (1.25 ns clock cycle) · 800 MHz · 1.35 V (DDR3L), 1.5 V compatible (DDR3)

聯絡詢價

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K4B4G1646Q-HC

✅ 直接替換
📦 96FBGA
Different speed grade

📋 參考替代品(不在目錄中)

K4B4G1646D-BYH9 最大額定值與電氣特性

Density 4 Gb
組織 256M x 16
資料速率 1333 Mbps
供應電壓 1.35 V
工作溫度 0 ~ 85 °C
封裝 96FBGA
Number of Banks 8
CAS 延遲 Programmable
Write Latency Programmable
On-Die Termination Yes
Internal Calibration Yes
Lead-Free Yes
無鹵素 Yes
RoHS Compliant Yes
Die Version D-die

K4B4G1646D-BYH9 腳位配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
腳位 A1 VDD — Power supply
腳位 A2 DQ0 — Data input/output 0
腳位 A3 DQ1 — Data input/output 1
腳位 B1 VSS — Ground
腳位 B2 DQ2 — Data input/output 2
腳位 B3 DQ3 — Data input/output 3
腳位 C1 VDDQ — I/O power supply
腳位 C2 DQ4 — Data input/output 4
腳位 C3 DQ5 — Data input/output 5
腳位 D1 VSSQ — I/O ground
腳位 D2 DQ6 — Data input/output 6
腳位 D3 DQ7 — Data input/output 7

典型應用

K4B4G1646D-BYH9 適用於 6 應用s: Personal Computers, Networking Equipment, Automotive Infotainment, Medical Devices, Industrial Automation, Consumer Electronics.

🖥️

Personal Computers

The K4B4G1646D-BYH9 is ideal for desktop and laptop memory modules, providing 4Gb capacity and 1333 Mbps data rate. Its low 1.35V operation reduces power consumption, extending battery life in portable devices. The 96FBGA package allows compact module designs, and the 8-bank architecture supports efficient multitasking.

🌐

Networking Equipment

In routers and switches, the K4B4G1646D-BYH9 provides high-bandwidth memory for packet buffering and routing tables. Its 1333 Mbps data rate ensures fast data throughput, while the low voltage helps manage thermal dissipation in dense networking hardware. The on-die termination and internal calibration features maintain signal integrity in high-speed designs.

🚗

Automotive Infotainment

The K4B4G1646D-BYH9 supports automotive infotainment systems requiring reliable memory for navigation, audio, and video processing. Its 0-85°C temperature range covers typical cabin environments, and the 1.35V operation reduces heat generation. The 96FBGA package withstands vibration, making it suitable for in-vehicle electronics.

💊

Medical Devices

Medical monitoring equipment benefits from the K4B4G1646D-BYH9's low power and high reliability. The 4Gb capacity supports data logging and real-time processing, while the 1.35V operation is suitable for battery-powered devices. The RoHS and halogen-free compliance meets medical environmental standards.

🏭

Industrial Automation

In industrial controllers and PLCs, the K4B4G1646D-BYH9 provides fast, reliable memory for real-time control algorithms. Its 1333 Mbps data rate ensures quick response times, and the 0-85°C range suits factory environments. The low voltage reduces power consumption in 24V systems, and the FBGA package offers robust soldering.

📺

Consumer Electronics

Smart TVs and set-top boxes use the K4B4G1646D-BYH9 for smooth video streaming and app performance. The 4Gb capacity handles multiple tasks, and the 1.35V operation keeps devices cool and energy-efficient. The 96FBGA package enables slim designs, and the high data rate supports 4K content.

What is the density and organization of K4B4G1646D-BYH9?
The K4B4G1646D-BYH9 is a 4Gb DDR3L SDRAM organized as 256M x 16 bits. According to the Samsung datasheet, it has 8 internal banks and supports a data rate of 1333 Mbps per pin.
What is the operating voltage of K4B4G1646D-BYH9?
The K4B4G1646D-BYH9 operates at 1.35V, which is the DDR3L low-voltage standard. This reduces power consumption compared to standard 1.5V DDR3, making it suitable for energy-efficient designs.
What is the price of K4B4G1646D-BYH9?
As of 2026-08-18, the price for K4B4G1646D-BYH9 is approximately $3.50 for single-unit quantities, with volume discounts available. For example, at 1000 units, the price drops to around $2.30 per unit.
Where can I buy K4B4G1646D-BYH9 online?
K4B4G1646D-BYH9 is available from authorized distributors such as DigiKey, Mouser, and Wolfchip. As of 2026-08-18, Wolfchip reports in stock. You can also check Octopart for real-time availability and pricing.
What is the lead time for K4B4G1646D-BYH9?
The lead time for K4B4G1646D-BYH9 varies by distributor and order quantity. As of 2026-08-18, typical lead times range from 2 to 4 weeks for standard orders. For urgent requirements, check stock availability at distributors like DigiKey or Mouser.
Is K4B4G1646D-BYH9 in stock?
Yes, as of 2026-08-18, K4B4G1646D-BYH9 is in stock at several distributors. Wolfchip reports in stock, and other distributors like DigiKey and Mouser may also have inventory. Check their websites for real-time stock levels.
What is the difference between K4B4G1646D-BYH9 and K4B4G1646E-BYH9?
The K4B4G1646D-BYH9 uses the D-die, while the K4B4G1646E-BYH9 uses the E-die. The E-die is a newer revision with improved performance and power characteristics. Both are 4Gb DDR3L SDRAM in 96FBGA, but the E-die may offer better timing margins.
Can K4B4G1646D-BYH9 be used in automotive applications?
The K4B4G1646D-BYH9 has an operating temperature range of 0°C to 85°C, which is suitable for commercial and industrial applications. For automotive-grade requirements, Samsung offers AEC-Q100 qualified versions, but this specific part is not explicitly listed as automotive-qualified.
What is the best drop-in replacement for K4B4G1646D-BYH9?
The K4B4G1646E-BYH9 is a drop-in replacement with the same 96FBGA package and pinout, offering improved performance. Other alternatives include K4B4G1646D-BHMA and K4B4G1646D-BCMA, which are also 4Gb DDR3L SDRAM in 96FBGA.
Where can I download the K4B4G1646D-BYH9 datasheet PDF?
The official datasheet for K4B4G1646D-BYH9 is available from Samsung Semiconductor at https://www.semiconductorsamsung.com/datasheet/semiconductorsamsung/K4B4G1646D-BYH9.pdf. It contains full specifications, pinout, and timing diagrams.
What are the key specifications of K4B4G1646D-BYH9 that engineers should know?
The K4B4G1646D-BYH9 is a 4Gb DDR3L SDRAM with 256M x 16 organization, 8 banks, and a data rate of 1333 Mbps. It operates at 1.35V and supports programmable CAS latency, on-die termination, and internal calibration. The package is 96FBGA, and it is RoHS compliant.
Is K4B4G1646D-BYH9 the same as K4B4G1646D-BHMA?
The K4B4G1646D-BYH9 and K4B4G1646D-BHMA are both 4Gb DDR3L SDRAM from Samsung with the same density and organization. The difference lies in the speed grade and temperature range. The BYH9 is rated for 1333 Mbps and 0-85°C, while the BHMA may have different specifications.
What is the best Samsung equivalent for K4B4G1646D-BYH9?
The K4B4G1646E-BYH9 is the best Samsung equivalent, offering the same package and pinout with improved performance. Other Samsung options include K4B4G1646D-BHMA and K4B4G1646D-BCMA, which are also 4Gb DDR3L SDRAM in 96FBGA.
What is the difference between K4B4G1646D-BYH9 and K4B4G1646D-BYK0?
The K4B4G1646D-BYH9 and K4B4G1646D-BYK0 are both 4Gb DDR3L SDRAM, but they may have different speed grades or temperature ranges. The BYH9 is rated for 1333 Mbps and 0-85°C, while the BYK0 may support higher speeds or extended temperature.

工程參考資料,適用於 K4B4G1646D-BYH9 — 比較、設計指引及合規資訊。

選型指南

Choose the K4B4G1646D-BYH9 when you need a 4Gb DDR3L SDRAM with 1333 Mbps data rate and low 1.35V operation. It is ideal for consumer electronics, networking, and industrial applications where power efficiency and performance are critical. If you require a newer die revision, consider the K4B4G1646E-BYH9. For automotive-grade requirements, look for AEC-Q100 qualified parts. The K4B4G1646D-BHMA and BCMA are alternatives with potentially different speed grades, so verify specifications before substitution.

與替代品比較

參數 本產品 K4B4G1646E-BYH9 K4B4G1646D-BHMA K4B4G1646D-BCMA
Package 96FBGA 96FBGA 96FBGA 96FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35 V 1.35 V 1.35 V 1.35 V
Die Version D-die E-die D-die D-die

主要差異化特點

  • Low-voltage 1.35V operation (對比Standard DDR3 at 1.5V)
  • D-die architecture (對比Older C-die)
  • 1333 Mbps data rate (對比K4B4G1646D-BHMA (unknown speed))

設計說明

Ensure controlled impedance traces for DQ and DQS signals to maintain signal integrity at 1333 Mbps. Use 50-ohm single-ended and 100-ohm differential routing. Keep trace lengths matched within +/- 10 mils to minimize skew.

Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a solid ground plane to reduce noise. The 1.35V supply should have low ripple, ideally below 50mV, to ensure reliable operation.

The 96FBGA package has a thermal resistance of approximately 20°C/W. For high-speed operation, ensure adequate airflow or a thermal pad to keep junction temperature below 85°C. Monitor power dissipation, especially in dense layouts.

合規資訊

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
無鉛
Yes
無鹵
Yes
衝突礦產
Unknown

Lead-free and halogen-free per datasheet. RoHS compliant.

資料驗證日期: 2026-08-18 — 資料由 XAIPART 元件工程團隊驗證及整理

相關搜尋

K4B4G1646D-BYH9 datasheet Samsung K4B4G1646D-BYH9 4Gb DDR3L SDRAM 256Mx16 96FBGA DDR3L memory K4B4G1646D-BYH9 price K4B4G1646D-BYH9 buy K4B4G1646D-BYH9 equivalent K4B4G1646D-BYH9 vs K4B4G1646E-BYH9 K4B4G1646D-BYH9 in stock K4B4G1646D-BYH9 lead time

相關元件與詞彙

Samsung Electronics K4B4G1646D-BYH9 K4B4G1646E-BYH9 K4B4G1646D-BHMA K4B4G1646D-BCMA DDR3L SDRAM 96FBGA FBGA RoHS Lead-Free Halogen-Free 1333 Mbps 1.35V 256M x 16 4Gb
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