K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
MPN： K4A8G165WC-BCWE ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $47.51 | $47.51 |
| 10 | $45 | $450.00 |
| 100 | $42.5 | $4,250.00 |
| 500 | $40 | $20,000.00 |
| 1,000 | $38 | $38,000.00 |
K4A8G165WC-BCWE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than previous generations, reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering improved reliability and performance over its predecessors.
Key features of the K4A8G165WC-BCWE include auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, ZQ calibration for improved signal integrity, dynamic on-chip termination (ODT) for better signal quality, and data mask function. These features enhance system reliability and performance, especially in high-speed data transmission environments. The device complies with JEDEC standards for DDR4 memory, ensuring interoperability with a wide range of controllers and systems.
Technically, the K4A8G165WC-BCWE utilizes Samsung's advanced C-die process technology, which contributes to its high speed and low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for modern PCB designs. The device supports a burst length of 8 and burst chop of 4, and includes programmable CAS latency and additive latency for flexible timing configurations.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The 512M x 16 organization is ideal for systems with a 16-bit data bus, such as advanced microprocessors and FPGAs. The low operating voltage and high speed make it suitable for power-sensitive applications like laptops and portable devices.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed signals. The device requires a stable 1.2V supply and a separate VPP of 2.5V for word line boost, which must be properly regulated.
直接替換替代品，適用於 K4A8G165WC-BCWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A8G165WC-BCWE （相同外形與佔位） — 差異在於 Interface, Package, Data Rate, Memory Type, Supply Voltage.
快速比較工具 — 選擇替代零件進行並排比較：
K4A8G165WG-BCWE
✗ 缺貨
$29.5313 / 單位
查看資料表 →K4A8G165WC-BCRC
聯絡詢價
查看資料表 →K4A8G165WB-BCWE
✓ 有庫存
$6.55 / 單位
查看資料表 →MT40A512M16JY-075E
聯絡詢價
查看資料表 →H5AN8G6NDJR
聯絡詢價
查看資料表 →AS4C512M16D4A-62BCN
聯絡詢價
查看資料表 →NT5AD512M16C4-JRI
✓ 有庫存
$75.58 / 單位
查看資料表 →YZ48G16V-F9HPI-M
聯絡詢價
查看資料表 →K4A8G165WC-BCWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gb |
| 組織 | 512M x 16 |
| 資料速率 | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| VPP Voltage | 2.5 V |
| 工作溫度範圍 | 0°C to +95°C |
| 封裝 | 96-FBGA |
| 安裝類型 | Surface Mount |
| Burst Length | 8 (BL8) / 4 (BC4) |
| Number of Banks | 16 |
| Row Address Bits | 16 |
| Column Address Bits | 10 |
| 介面 | Differential (CK, /CK) |
| RoHS 狀態 | Compliant |
| JEDEC Standard | JEDEC DDR4 |
K4A8G165WC-BCWE 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | VSS — Ground |
| 腳位 B1 | DQ1 — Data input/output 1 |
| 腳位 B2 | VDDQ — Power supply for output buffers |
| 腳位 B3 | DQ2 — Data input/output 2 |
| 腳位 C1 | VSSQ — Ground for output buffers |
| 腳位 C2 | DQ3 — Data input/output 3 |
| 腳位 C3 | VDD — Power supply (1.2V) |
| 腳位 D1 | DQ4 — Data input/output 4 |
| 腳位 D2 | VSS — Ground |
| 腳位 D3 | DQ5 — Data input/output 5 |
| 腳位 E1 | VDDQ — Power supply for output buffers |
| 腳位 E2 | DQ6 — Data input/output 6 |
| 腳位 E3 | VSSQ — Ground for output buffers |
| 腳位 F1 | DQ7 — Data input/output 7 |
| 腳位 F2 | VDD — Power supply (1.2V) |
| 腳位 F3 | DQ8 — Data input/output 8 |
| 腳位 G1 | VSS — Ground |
| 腳位 G2 | DQ9 — Data input/output 9 |
| 腳位 G3 | VDDQ — Power supply for output buffers |
| 腳位 H1 | DQ10 — Data input/output 10 |
| 腳位 H2 | VSSQ — Ground for output buffers |
| 腳位 H3 | DQ11 — Data input/output 11 |
| 腳位 J1 | VDD — Power supply (1.2V) |
| 腳位 J2 | DQ12 — Data input/output 12 |
| 腳位 J3 | VSS — Ground |
| 腳位 K1 | DQ13 — Data input/output 13 |
| 腳位 K2 | VDDQ — Power supply for output buffers |
| 腳位 K3 | DQ14 — Data input/output 14 |
| 腳位 L1 | VSSQ — Ground for output buffers |
| 腳位 L2 | DQ15 — Data input/output 15 |
| 腳位 L3 | VDD — Power supply (1.2V) |
| 腳位 M1 | VSS — Ground |
| 腳位 M2 | CK — Clock input (positive) |
| 腳位 M3 | VDDQ — Power supply for output buffers |
| 腳位 N1 | /CK — Clock input (negative) |
| 腳位 N2 | VSSQ — Ground for output buffers |
| 腳位 N3 | CKE — Clock enable |
| 腳位 P1 | VDD — Power supply (1.2V) |
| 腳位 P2 | VSS — Ground |
| 腳位 P3 | CS_n — Chip select (active low) |
典型應用
K4A8G165WC-BCWE 適用於 6 應用s: High-Performance Computing, Networking Equipment, Embedded Systems, Data Center Servers, Consumer Electronics, Automotive Infotainment.
High-Performance Computing
The K4A8G165WC-BCWE provides 8Gb density and 3200 Mbps speed, making it ideal for servers and workstations that require large memory capacity and high bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device's CRC and on-die ECC features enhance data integrity in mission-critical computing environments.
推薦
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WC-BCWE offers the speed and capacity needed for packet buffering and routing tables. Its 3200 Mbps data rate supports high-throughput data processing, while the 1.2V supply helps meet strict power budgets. The device's dynamic ODT and ZQ calibration improve signal integrity on high-speed buses, ensuring reliable operation in noisy environments.
推薦
Embedded Systems
For embedded applications like industrial controllers and IoT gateways, the K4A8G165WC-BCWE provides a balance of density, speed, and power efficiency. Its 0°C to +95°C temperature range covers most commercial and industrial environments. The 96-FBGA package is suitable for compact PCB designs, and the device's low power consumption extends battery life in portable systems.
推薦
Data Center Servers
The K4A8G165WC-BCWE is well-suited for data center servers that require high memory capacity and bandwidth for virtualization, databases, and cloud computing. Its 8Gb density allows for large memory modules, and the 3200 Mbps speed meets the demands of modern processors. The low operating voltage reduces total power consumption, contributing to energy-efficient data centers.
推薦
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G165WC-BCWE delivers the memory performance needed for smooth graphics and multitasking. Its 3200 Mbps data rate supports high-resolution video and gaming, while the 1.2V supply helps manage heat and power in compact enclosures. The device's small FBGA package enables slim device designs.
推薦
Automotive Infotainment
The K4A8G165WC-BCWE can be used in automotive infotainment systems that require high memory bandwidth for navigation, multimedia, and driver assistance features. Its 0°C to +95°C temperature range is suitable for cabin environments, though not for under-hood applications. The device's reliability features like CRC and ODT ensure stable operation in the electrically noisy automotive environment.
推薦
推薦產品摘要
工程參考資料，適用於 K4A8G165WC-BCWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A8G165WG-BCWE | MT40A512M16JY-075E | H5AN8G6NDJR |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
主要差異化特點
- C-die revision with wide temperature range (對比K4A8G165WG-BCWE)
- Samsung's proven reliability and performance (對比MT40A512M16JY-075E)
- Availability and ecosystem support (對比H5AN8G6NDJR)
設計說明
Ensure stable 1.2V VDD and 2.5V VPP supplies with adequate decoupling. Place 0.1uF and 1uF ceramic capacitors close to each power pin to minimize noise and voltage droop during high-speed switching. Follow the JEDEC DDR4 power distribution guidelines for optimal performance.
Route high-speed DQ, DQS, and clock signals with controlled impedance (typically 40-50 ohms) and matched trace lengths to ensure signal integrity. Use ground planes and minimize vias on critical signals. Refer to the Samsung layout guidelines in the datasheet for recommended routing and spacing.
The K4A8G165WC-BCWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-power systems. The 96-FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation. Monitor junction temperature to avoid exceeding the maximum rating.
合規資訊
RoHS compliance is indicated by Samsung's product page. Other compliance details are not explicitly stated in the provided data.
