K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
Référence : K9F2808Q0B ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9F2808Q0B Présentation
NAND Flash is a non-volatile memory technology that stores data in floating-gate cells arranged in series, enabling high density at low cost per bit. Within the memory hierarchy, NAND Flash sits alongside NOR Flash as a mass-storage medium: NOR offers random access for code execute-in-place, while NAND offers higher density and faster program/erase throughput, making it the standard choice for data storage in embedded systems. The K9F2808Q0B belongs to Samsung's early small-block SLC NAND family, using a multiplexed 8-bit address/data bus with command, address, and data latched on the I/O pins.
Key features include single-level-cell (SLC) technology for the highest endurance and reliability among Flash types, a low-voltage 1.8 V operating rail that reduces system power compared with 3.3 V devices, and a 16M x 8 organization with an 8-bit multiplexed I/O interface. Access control is handled through standard NAND command latches (CLE/ALE), with ready/busy signaling for program and erase operations.
Architecturally, the device divides the 128 Mbit array into pages and blocks; pages are the unit of programming and blocks the unit of erase, as detailed in the Samsung datasheet. SLC storage of one bit per cell delivers fast program times and wide noise margins relative to later multi-level-cell devices.
Typical applications include embedded system boot and configuration storage, set-top boxes, industrial data loggers, and legacy equipment maintenance where the 1.8 V rail and 63-TBGA footprint are already designed in.
When designing with this device, implement ECC (at minimum 1-bit correction per page, per Samsung SLC recommendations) and manage block wear in the controller or driver layer, since NAND blocks have limited erase cycles.
This page synthesizes datasheet parameters, family cross-references, and practical design guidance not consolidated on distributor pages. Pricing as of 2026-09-04.
Alternatives de remplacement direct pour K9F2808Q0B — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9F2808Q0B (même facteur de forme et même empreinte) — différant par Memory Type, Interface, Organization, Package, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9F6408Q0C
✅ Remplacement direct✓ En stock
$1.31 / unité
Voir la fiche technique →K9F6408U0B
✅ Remplacement direct✓ En stock
$3.2 / unité
Voir la fiche technique →K9F2808U0B-DCB0
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K9F2808U0B-DIB0
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K9F2808Q0B Valeurs maximales et caractéristiques électriques
| Type de mémoire | SLC NAND Flash (parallel) |
| Density | 128 Mbit |
| Organisation de la mémoire | 16M x 8 |
| Operating Voltage (VCC) | 1.7 V to 1.95 V |
| Read Access Speed | 50 ns |
| Cell Type | SLC (1 bit/cell) |
| Interface | 8-bit multiplexed address/data |
| Boîtier | 63-pin TBGA |
| Temperature Grade | C (commercial), I (industrial) |
| Type de montage | Surface Mount |
| Statut RoHS | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete |
Guide de configuration des broches du K9F2808Q0B 63-pin tbga
Configuration des broches du K9F2808Q0B (boîtier 63-pin tbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9F2808Q0B.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9F2808Q0B convient pour 6 applications: Embedded System Boot Storage, Set-Top Box and Consumer Electronics Firmware, Industrial Data Loggers, Legacy Equipment Maintenance and Repair, Handheld and Portable Instruments, Networking Equipment Configuration Storage.
Embedded System Boot Storage
The K9F2808Q0B stores boot code and configuration parameters in embedded systems where the processor already boots from a Samsung small-block NAND command set. Its 16M x 8 organization provides 16 MB of code space - ample for bootloaders, kernel images, and factory settings - while the 1.7 V to 1.95 V rail matches modern low-voltage microcontroller I/O. SLC cells retain data reliably across power cycles with 50 ns read access for fast boot sequencing. Designers must implement 1-bit-per-page ECC and bad-block scanning at the boot driver level, per Samsung's small-block NAND management scheme, since raw NAND requires controller-side error handling.
Recommandé
Set-Top Box and Consumer Electronics Firmware
In set-top boxes and consumer media devices of the K9F design generation, the K9F2808Q0B held firmware images and channel/configuration databases on a 1.8 V rail that reduced system power versus 3.3 V NAND. The 128 Mbit density accommodated complete firmware plus user preference storage, and the 50 ns read speed supported in-place reads during firmware validation. The 63-pin TBGA package enabled compact two-sided board assembly in slim consumer enclosures. SLC endurance suited devices that rewrite settings daily; systems performing frequent recording needed external wear-leveling software to distribute erase cycles across the block array.
Recommandé
Industrial Data Loggers
Industrial data loggers used the K9F2808Q0B to record sensor samples and event logs, exploiting the industrial (I) temperature grade (ordering variants such as -DIB0) and SLC reliability. The 1.8 V supply reduced logger power draw during battery operation, and the multiplexed 8-bit interface connected easily to low-pin-count microcontrollers through GPIO or memory controllers. The 16 MB capacity stored months of timestamped records, while SLC's wide noise margins protected data against the electrical noise typical of factory floors. Loggers must implement block wear leveling and power-fail recovery, since program interruption mid-page can corrupt the page, per Samsung's NAND management guidelines.
Recommandé
Legacy Equipment Maintenance and Repair
For maintaining installed bases of equipment designed around the K9F2808Q0B, service organizations source this exact MPN because firmware images and address maps are hard-coded to its 16M x 8 geometry and 1.8 V rail. The 63-pin TBGA footprint and Samsung command-set timing mean a same-MPN replacement restores operation without firmware changes. Repair stock should be date-code controlled, since stored SLC NAND can accumulate bit errors over many years; reprogramming the spare parts and verifying ECC counters during service is recommended. Aftermarket channels and quote-based sourcing are the realistic acquisition paths given the part's EOL status.
Recommandé
Handheld and Portable Instruments
Battery-powered handheld instruments adopted the K9F2808Q0B because its 1.7 V to 1.95 V operation allowed direct connection to single-cell rail systems, minimizing converter stages. Typical read current figures (revised in the datasheet history, originally around 5 mA class) kept average drain low between measurement bursts, while the 50 ns access time let instrument firmware read calibration tables without delaying measurements. The TBGA package withstood portable mechanical stress better than thin plastic leaded packages when properly underfilled. Designers should buffer the R/B output and manage CE during sleep states to minimize standby current in duty-cycled instruments.
Recommandé
Networking Equipment Configuration Storage
Routers, switches, and access points of the K9F generation stored MAC addresses, configuration files, and failsafe boot images on the K9F2808Q0B. The 16 MB capacity covered a compressed firmware image plus dual-config schemes, and SLC endurance handled frequent configuration writes in the field. The 1.8 V rail matched the low-voltage memory subsystems of networking SoCs of that era, and the TBGA package suited high-density line-card assemblies. Network equipment requires failsafe dual-image designs, so two power-fail-safe update procedures with rollback pointers in spare area were standard practice on this class of raw NAND.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9F2808Q0B — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9F6408Q0C | K9F6408U0B | K9F2808U0B-DCB0 |
|---|---|---|---|---|
| Package | 63-pin TBGA | 63-TBGA family - same | 63-TBGA family - same | 63-TBGA family - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 128 Mbit (16M x 8) | 64 Mbit (8M x 8) | 64 Mbit (8M x 8) | 128 Mbit (16M x 8) |
| Supply Voltage | 1.7 V to 1.95 V | 1.8 V class (Q-series) | 3.3 V class (U-series) | 3.3 V class (U-series) |
| Cell Type | SLC | SLC | SLC | SLC |
| Lifecycle Status | EOL | EOL (legacy family) | EOL (legacy family) | EOL (legacy family) |
Principaux différenciateurs
- Full 128 Mbit capacity on a 1.8 V rail (vs K9F6408Q0C)
- 1.8 V operation vs 3.3 V siblings (vs K9F2808U0B-DCB0)
- SLC reliability with 50 ns read access (vs K9F6408U0B)
Notes de conception
The 8-bit multiplexed I/O bus of the K9F2808Q0B relies on clean CLE/ALE/WE/RE timing; keep command and address latch setup/hold within the datasheet AC limits and keep bus traces short (under ~10 cm at this speed class). Termination is generally unnecessary at 1.8 V NAND speeds, but series resistors of 22-33 ohms on WE/RE damp ringing on longer traces. Ensure R/B is treated as open-drain with a pull-up appropriate to the 1.8 V rail - typically 10 kohm.
Never connect the K9F2808Q0B to a 3.3 V rail - it is the 1.8 V (1.7-1.95 V) member of the K9F2808 family, while the U0B suffix denotes the 3.3 V device. Additionally, raw NAND requires controller-side ECC (1-bit per page for SLC) and bad-block management; writing data without ECC and without marking factory bad blocks will cause silent data corruption. Check the initial bad-block table shipped in the device before first use, per Samsung's small-block NAND application guidance.
Decouple VCC with at least 0.1 uF ceramic close to each supply ball plus 4.7-10 uF bulk capacitance, since program operations draw current pulses on the 1.8 V rail. Estimated: if the revised typical read current is in the several-mA class (datasheet history notes Icc1 was changed from 5 mA), a stable 1.8 V LDO rated at 50-100 mA provides ample margin including program/erase peaks; verify peak program current against the latest datasheet revision before finalizing the regulator.
Informations de conformité
This is a legacy EOL part predating modern environmental declarations; Samsung's current compliance databases no longer list it. Verify RoHS/lead status with the specific date code and package suffix when sourcing aftermarket stock.
