NT5CC256M16CN-FLI - 4Gb DDR3L SDRAM | Nanya Technology
MPN： NT5CC256M16CN-FLI ✓ 啟用中NT5CC256M16CN-FLI 概覽
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, and is widely used in computing, networking, and embedded systems.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT), and programmable CAS latency. The device supports auto self-refresh and auto precharge functions, ensuring data integrity with minimal power. It also includes write leveling, data mask, and ZQ calibration functions for signal integrity and system reliability.
The NT5CC256M16CN-FLI is fabricated using Nanya's advanced DRAM process technology, providing high density and low power consumption. It supports a temperature range of 0°C to +95°C (case temperature) for industrial applications, with derating required above 95°C. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial computing. Its low voltage and high speed make it ideal for power-sensitive designs, while the industrial temperature range supports harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a 0.75V reference voltage for the address/command bus.
直接替換替代品，適用於 NT5CC256M16CN-FLI — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16CN-FLI （相同外形與佔位） — 差異在於 Package, Supply Voltage, Data Rate, Density, Auto Self-Refresh.
NT5CC256M16ER-EK
✅ 直接替換聯絡詢價
查看資料表 →NT5CC256M16CP-FLI
✅ 直接替換📋 參考替代品（不在目錄中）
NT5CC256M16CN-DIA
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16TW-107
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.1 / 單位
查看資料表 →K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →NT5CC256M16CN-FLI 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4Gb (256M x 16) |
| 供應電壓 | 1.35V (DDR3L) |
| 資料速率 | 1866 Mbps (PC3-14900) |
| I/O Width | 16 bits |
| Internal Banks | 8 |
| Burst Length | 8 and 4 (with burst chop) |
| CAS 延遲 | Programmable (11, 12, 13) |
| 封裝 | TFBGA-96 |
| 工作溫度範圍 | 0°C to +95°C (case) |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Supported |
| Auto Precharge | Supported |
| On-Die Termination (ODT) | Supported |
| Write Leveling | Supported |
| ZQ Calibration | Supported |
NT5CC256M16CN-FLI 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data I/O 0 |
| 腳位 A3 | DQ1 — Data I/O 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data I/O 2 |
| 腳位 B2 | DQ3 — Data I/O 3 |
| 腳位 B3 | VDDQ — I/O power supply |
| 腳位 C1 | DQ4 — Data I/O 4 |
| 腳位 C2 | DQ5 — Data I/O 5 |
| 腳位 C3 | VSSQ — I/O ground |
| 腳位 D1 | DQ6 — Data I/O 6 |
| 腳位 D2 | DQ7 — Data I/O 7 |
| 腳位 D3 | VDD — Power supply |
| 腳位 E1 | DM0 — Data mask 0 |
| 腳位 E2 | DQS0 — Data strobe 0 |
| 腳位 E3 | DQS0# — Data strobe 0 complement |
典型應用
NT5CC256M16CN-FLI 適用於 6 應用s: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Data Storage Systems.
Embedded Computing
The NT5CC256M16CN-FLI provides high-density, low-power memory for embedded processors and SoCs. Its 1.35V operation reduces power consumption, making it ideal for battery-powered devices. The 1866 Mbps data rate ensures fast data access for real-time applications. When used in embedded systems, it is typically paired with a DDR3L controller, and proper termination and decoupling are essential for signal integrity.
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Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CN-FLI provides high-speed packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, while the industrial temperature range ensures reliability in telecom environments. The device's on-die termination and write leveling features improve signal integrity on high-speed buses, reducing bit errors.
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Industrial Automation
The NT5CC256M16CN-FLI is suitable for industrial automation systems that require reliable memory in harsh conditions. Its 0°C to +95°C operating range and auto self-refresh function ensure data integrity during power fluctuations. The low 1.35V supply reduces heat generation, which is critical in sealed enclosures. It can be used in PLCs, HMIs, and motor control units.
推薦
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CN-FLI provides high-bandwidth memory for navigation, multimedia, and instrument clusters. Its automotive-grade variant (NT5CC256M16CN-DIA) is AEC-Q100 qualified, ensuring reliability in extreme temperatures. The 1.35V operation reduces power consumption, which is important for vehicle battery life. The device supports fast boot times and smooth graphics rendering.
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Consumer Electronics
The NT5CC256M16CN-FLI is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its high density and low power make it ideal for multimedia applications that require large memory buffers. The 1866 Mbps data rate supports 4K video streaming and multitasking. The compact TFBGA-96 package allows for slim device designs.
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Data Storage Systems
In data storage systems such as SSDs and NAS devices, the NT5CC256M16CN-FLI serves as a cache buffer for high-speed data transfers. Its low latency and high bandwidth improve read/write performance. The auto self-refresh feature reduces power consumption during idle periods, which is critical for always-on storage devices. The industrial temperature range supports data center environments.
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推薦產品摘要
工程參考資料，適用於 NT5CC256M16CN-FLI — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16ER-EK | NT5CC256M16CP-FLI | NT5CC256M16CN-DIA | MT41K256M16TW-107 | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (automotive) | 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | No | Yes (AEC-Q100) | No | No |
主要差異化特點
- Industrial temperature range (對比NT5CC256M16ER-EK)
- Automotive grade option (對比NT5CC256M16CN-DIA)
- Lower cost (對比NT5CC256M16ER-EK)
設計說明
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and DQS signals to maintain signal integrity at 1866 Mbps.
The device operates up to +95°C case temperature. For high ambient temperatures, ensure adequate airflow or heatsinking. Above 95°C, AC/DC parameters must be derated as per the datasheet note 5.
Use on-die termination (ODT) settings to match the bus impedance. Enable write leveling for proper DQS-DQ alignment. Follow the layout guidelines in the Nanya datasheet for address/command routing to avoid crosstalk.
合規資訊
RoHS compliant and lead-free per Nanya datasheet. AEC-Q100 not applicable for this variant; use NT5CC256M16CN-DIA for automotive.
