E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA
MPN： E3AD8G16A4-HR ✓ 啟用中E3AD8G16A4-HR 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering higher speed, lower voltage, and improved reliability over previous generations. DDR4 modules are essential for applications demanding high memory bandwidth, such as artificial intelligence, big data analytics, and high-performance computing.
Key features of the E3AD8G16A4-HR include a data rate of 3200 MT/s (megatransfers per second), a CAS latency of 22, and support for on-die ECC (Error Correction Code) to enhance data integrity. The device also features a programmable read/write preamble, a 10-bit data bus inversion, and a 16n prefetch architecture, which contribute to its high-speed operation and signal integrity. The 1.2V supply voltage reduces power consumption by approximately 20% compared to DDR3L, making it ideal for power-sensitive designs.
Technically, the E3AD8G16A4-HR utilizes a 16n prefetch architecture with a 4-bank group design, enabling efficient data access and improved bandwidth utilization. It supports a burst length of 8 and a burst chop of 4, allowing flexible data transfer modes. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rates based on operating temperature, optimizing power consumption and reliability. The TFBGA-96 package offers excellent thermal performance and a compact footprint, facilitating high-density PCB layouts.
Typical applications for the E3AD8G16A4-HR include high-performance computing systems, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it suitable for use in servers, data centers, and advanced driver-assistance systems (ADAS) where rapid data processing is critical.
When designing with this device, ensure proper signal integrity by maintaining controlled impedance traces and minimizing crosstalk. The 1.2V supply should be well-regulated and decoupled with high-frequency capacitors near the power pins. Additionally, follow the JEDEC DDR4 layout guidelines to achieve optimal performance and reliability.
直接替換替代品，適用於 E3AD8G16A4-HR — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： E3AD8G16A4-HR （相同外形與佔位） — 差異在於 Data Rate, Package, Operating Temperature, Interface, CAS Latency.
NT5AD512M16C4-HR
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT40A512M16TB-062E
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$60 / 單位
查看資料表 →MT40A512M16JY-075E
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT40A512M16LY-075
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$27.8906 / 單位
查看資料表 →AS4C512M16D4A-62BCN
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4A8G165WC-BCRC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →E3AD8G16A4-HR 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 組織 | 512M x 16 |
| Density | 8 Gb |
| 供應電壓 | 1.2 V |
| 封裝 | TFBGA-96 |
| 資料速率 | 3200 MT/s |
| CAS 延遲 | 22 |
| Burst Length | 8 (BC4 optional) |
| Number of Banks | 16 (4 bank groups) |
| Refresh | Auto-refresh and self-refresh |
| 工作溫度 | 0C to +95C (TCASE) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 安裝類型 | Surface Mount |
| Speed Grade | DDR4-3200 |
E3AD8G16A4-HR 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — DQ power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — DQ ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
| 腳位 E1 | DM0 — Data mask 0 |
| 腳位 E2 | DQS0 — Data strobe 0 |
| 腳位 E3 | DQS0# — Data strobe 0 complement |
典型應用
E3AD8G16A4-HR 適用於 6 應用s: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The E3AD8G16A4-HR provides high density and speed (8Gb, 3200 MT/s) essential for HPC systems that require large memory bandwidth for complex simulations and data processing. Its 1.2V operation reduces power consumption, enabling efficient cooling in dense server environments. The TFBGA-96 package allows compact module designs, maximizing memory capacity per board.
推薦
Networking Equipment
In routers and switches, the E3AD8G16A4-HR offers the speed and density needed for packet buffering and forwarding tables. Its 3200 MT/s data rate ensures low latency, while the 8Gb capacity supports large routing tables. The 1.2V supply helps meet strict power budgets in networking hardware, and the TFBGA-96 package fits well on line cards.
推薦
Industrial Automation
The E3AD8G16A4-HR is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time processing. Its 8Gb density allows storing large control programs and data logs. The device's operating temperature range (0C to +95C) ensures performance in industrial environments, and the 1.2V supply reduces heat generation.
推薦
Automotive Infotainment
In automotive infotainment systems, the E3AD8G16A4-HR provides the memory bandwidth for navigation, multimedia, and connectivity features. Its high speed (3200 MT/s) ensures smooth graphics and fast app loading. The 1.2V operation is beneficial for automotive power systems, and the TFBGA-96 package withstands vibration and temperature variations.
推薦
Data Center Servers
The E3AD8G16A4-HR is ideal for data center servers that require high memory capacity and speed for virtualization and cloud computing. Its 8Gb density allows large memory pools, and 3200 MT/s speed reduces bottlenecks. The 1.2V supply lowers power consumption, contributing to energy-efficient data centers. The TFBGA-96 package enables high-density DIMMs.
推薦
Consumer Electronics
In high-end consumer devices like gaming consoles and 4K TVs, the E3AD8G16A4-HR provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 1.2V supply is efficient for battery-powered devices, and the compact TFBGA-96 package fits slim designs.
推薦
推薦產品摘要
工程參考資料，適用於 E3AD8G16A4-HR — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5AD512M16C4-HR | MT40A512M16TB-062E | MT40A512M16JY-075E | MT40A512M16LY-075 | AS4C512M16D4A-62BCN | K4A8G165WC-BCRC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | ELIXIR/NANYA | Nanya Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 2400 MT/s | 2400 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 17 | 17 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Higher data rate (3200 MT/s) compared to some alternatives (對比MT40A512M16JY-075E)
- Same-brand drop-in alternative available (對比NT5AD512M16C4-HR)
- RoHS compliant and lead-free (對比K4A8G165WC-BCRC)
設計說明
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ and DQS signals. Keep trace lengths matched within +/- 10 mils for each byte lane to ensure signal integrity. Use ground planes adjacent to signal layers to minimize crosstalk and EMI.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to reduce noise. Ensure the 1.2V supply is stable and within +/- 5% tolerance as per JEDEC DDR4 specifications.
The E3AD8G16A4-HR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance of approximately 20C/W; calculate junction temperature to avoid exceeding the limit.
合規資訊
RoHS compliance indicated in AB Sunshine Electronics listing. Other compliance data not available.
