NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN： NT5CB256M16CP-DI ✓ 啟用中NT5CB256M16CP-DI 概覽
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock. DDR3L is widely used in mobile, embedded, and industrial applications where power efficiency is critical.
Key features include a 256Mx16 organization (4Gb density), 1.35V supply voltage, 96-ball TFBGA package, and support for data rates up to 1600 Mbps/pin. The device has a programmable CAS latency of 5-11, write latency of 5-9, and additive latency of 0-13. It also features 8 internal banks, differential clock inputs, and on-die termination. The operating temperature range is -40°C to +95°C (industrial) and -40°C to +105°C (automotive).
The NT5CB256M16CP-DI uses a 70nm process technology, enabling high density and low power consumption. It incorporates DLL (delay-locked loop) for precise timing, and supports self-refresh and partial array self-refresh for power saving. The device is RoHS compliant and lead-free.
Typical applications include embedded systems, networking equipment, industrial automation, automotive infotainment, and solid-state drives. Its low voltage and wide temperature range make it suitable for harsh environments.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for optimal operation.
直接替換替代品，適用於 NT5CB256M16CP-DI — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CB256M16CP-DI （相同外形與佔位） — 差異在於 Package, Data Rate, Supply Voltage, Operating Temperature, Burst Length.
NT5CB256M16DP-DI
✅ 直接替換📋 參考替代品（不在目錄中）
NT5CB256M16CP-DII
✅ 直接替換✗ 缺貨
$5.5682 / 單位
查看資料表 →MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →IS43TR16512B-125K
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NT5CB256M16CP-DI 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 組織 | 256M x 16 |
| Density | 4 Gb |
| 供應電壓 | 1.35 V (DDR3L) |
| 資料速率 | 1600 Mbps/pin (max) |
| 封裝 | TFBGA-96 |
| Number of Banks | 8 |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Additive Latency | 0-13 |
| 工作溫度範圍 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Differential Clock Input | Yes (CK, CK#) |
| On-Die Termination (ODT) | Yes |
NT5CB256M16CP-DI 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply (1.35V) |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VDD — Power supply (1.35V) |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VSS — Ground |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VDD — Power supply (1.35V) |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
| 腳位 C1 | VDD — Power supply (1.35V) |
| 腳位 C2 | VSS — Ground |
| 腳位 C3 | VDD — Power supply (1.35V) |
| 腳位 C4 | VSS — Ground |
| 腳位 C5 | VDD — Power supply (1.35V) |
| 腳位 C6 | VSS — Ground |
| 腳位 C7 | VDD — Power supply (1.35V) |
| 腳位 C8 | VSS — Ground |
| 腳位 C9 | VDD — Power supply (1.35V) |
| 腳位 C10 | VSS — Ground |
| 腳位 C11 | VDD — Power supply (1.35V) |
| 腳位 C12 | VSS — Ground |
| 腳位 D1 | VSS — Ground |
| 腳位 D2 | VDD — Power supply (1.35V) |
| 腳位 D3 | VSS — Ground |
| 腳位 D4 | VDD — Power supply (1.35V) |
| 腳位 D5 | VSS — Ground |
| 腳位 D6 | VDD — Power supply (1.35V) |
| 腳位 D7 | VSS — Ground |
| 腳位 D8 | VDD — Power supply (1.35V) |
| 腳位 D9 | VSS — Ground |
| 腳位 D10 | VDD — Power supply (1.35V) |
| 腳位 D11 | VSS — Ground |
| 腳位 D12 | VDD — Power supply (1.35V) |
| 腳位 E1 | VDD — Power supply (1.35V) |
| 腳位 E2 | VSS — Ground |
| 腳位 E3 | VDD — Power supply (1.35V) |
| 腳位 E4 | VSS — Ground |
| 腳位 E5 | VDD — Power supply (1.35V) |
| 腳位 E6 | VSS — Ground |
| 腳位 E7 | VDD — Power supply (1.35V) |
| 腳位 E8 | VSS — Ground |
| 腳位 E9 | VDD — Power supply (1.35V) |
| 腳位 E10 | VSS — Ground |
| 腳位 E11 | VDD — Power supply (1.35V) |
| 腳位 E12 | VSS — Ground |
| 腳位 F1 | VSS — Ground |
| 腳位 F2 | VDD — Power supply (1.35V) |
| 腳位 F3 | VSS — Ground |
| 腳位 F4 | VDD — Power supply (1.35V) |
| 腳位 F5 | VSS — Ground |
| 腳位 F6 | VDD — Power supply (1.35V) |
| 腳位 F7 | VSS — Ground |
| 腳位 F8 | VDD — Power supply (1.35V) |
| 腳位 F9 | VSS — Ground |
| 腳位 F10 | VDD — Power supply (1.35V) |
| 腳位 F11 | VSS — Ground |
| 腳位 F12 | VDD — Power supply (1.35V) |
| 腳位 G1 | VDD — Power supply (1.35V) |
| 腳位 G2 | VSS — Ground |
| 腳位 G3 | VDD — Power supply (1.35V) |
| 腳位 G4 | VSS — Ground |
| 腳位 G5 | VDD — Power supply (1.35V) |
| 腳位 G6 | VSS — Ground |
| 腳位 G7 | VDD — Power supply (1.35V) |
| 腳位 G8 | VSS — Ground |
| 腳位 G9 | VDD — Power supply (1.35V) |
| 腳位 G10 | VSS — Ground |
| 腳位 G11 | VDD — Power supply (1.35V) |
| 腳位 G12 | VSS — Ground |
| 腳位 H1 | VSS — Ground |
| 腳位 H2 | VDD — Power supply (1.35V) |
| 腳位 H3 | VSS — Ground |
| 腳位 H4 | VDD — Power supply (1.35V) |
| 腳位 H5 | VSS — Ground |
| 腳位 H6 | VDD — Power supply (1.35V) |
| 腳位 H7 | VSS — Ground |
| 腳位 H8 | VDD — Power supply (1.35V) |
| 腳位 H9 | VSS — Ground |
| 腳位 H10 | VDD — Power supply (1.35V) |
| 腳位 H11 | VSS — Ground |
| 腳位 H12 | VDD — Power supply (1.35V) |
| 腳位 J1 | VDD — Power supply (1.35V) |
| 腳位 J2 | VSS — Ground |
| 腳位 J3 | VDD — Power supply (1.35V) |
| 腳位 J4 | VSS — Ground |
| 腳位 J5 | VDD — Power supply (1.35V) |
| 腳位 J6 | VSS — Ground |
| 腳位 J7 | VDD — Power supply (1.35V) |
| 腳位 J8 | VSS — Ground |
| 腳位 J9 | VDD — Power supply (1.35V) |
| 腳位 J10 | VSS — Ground |
| 腳位 J11 | VDD — Power supply (1.35V) |
| 腳位 J12 | VSS — Ground |
| 腳位 K1 | VSS — Ground |
| 腳位 K2 | VDD — Power supply (1.35V) |
| 腳位 K3 | VSS — Ground |
| 腳位 K4 | VDD — Power supply (1.35V) |
| 腳位 K5 | VSS — Ground |
| 腳位 K6 | VDD — Power supply (1.35V) |
| 腳位 K7 | VSS — Ground |
| 腳位 K8 | VDD — Power supply (1.35V) |
| 腳位 K9 | VSS — Ground |
| 腳位 K10 | VDD — Power supply (1.35V) |
| 腳位 K11 | VSS — Ground |
| 腳位 K12 | VDD — Power supply (1.35V) |
| 腳位 L1 | VDD — Power supply (1.35V) |
| 腳位 L2 | VSS — Ground |
| 腳位 L3 | VDD — Power supply (1.35V) |
| 腳位 L4 | VSS — Ground |
| 腳位 L5 | VDD — Power supply (1.35V) |
| 腳位 L6 | VSS — Ground |
| 腳位 L7 | VDD — Power supply (1.35V) |
| 腳位 L8 | VSS — Ground |
| 腳位 L9 | VDD — Power supply (1.35V) |
| 腳位 L10 | VSS — Ground |
| 腳位 L11 | VDD — Power supply (1.35V) |
| 腳位 L12 | VSS — Ground |
| 腳位 M1 | VSS — Ground |
| 腳位 M2 | VDD — Power supply (1.35V) |
| 腳位 M3 | VSS — Ground |
| 腳位 M4 | VDD — Power supply (1.35V) |
| 腳位 M5 | VSS — Ground |
| 腳位 M6 | VDD — Power supply (1.35V) |
| 腳位 M7 | VSS — Ground |
| 腳位 M8 | VDD — Power supply (1.35V) |
| 腳位 M9 | VSS — Ground |
| 腳位 M10 | VDD — Power supply (1.35V) |
| 腳位 M11 | VSS — Ground |
| 腳位 M12 | VDD — Power supply (1.35V) |
| 腳位 N1 | VDD — Power supply (1.35V) |
| 腳位 N2 | VSS — Ground |
| 腳位 N3 | VDD — Power supply (1.35V) |
| 腳位 N4 | VSS — Ground |
| 腳位 N5 | VDD — Power supply (1.35V) |
| 腳位 N6 | VSS — Ground |
| 腳位 N7 | VDD — Power supply (1.35V) |
| 腳位 N8 | VSS — Ground |
| 腳位 N9 | VDD — Power supply (1.35V) |
| 腳位 N10 | VSS — Ground |
| 腳位 N11 | VDD — Power supply (1.35V) |
| 腳位 N12 | VSS — Ground |
典型應用
NT5CB256M16CP-DI 適用於 6 應用s: Embedded Systems, Networking Equipment, Industrial Automation, Automotive Infotainment, Solid-State Drives (SSD), Test and Measurement.
Embedded Systems
The NT5CB256M16CP-DI provides 4Gb of DDR3L memory in a compact TFBGA-96 package, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The wide temperature range (-40°C to +95°C) ensures reliable operation in industrial environments. With data rates up to 1600 Mbps, it supports high-bandwidth applications like real-time data processing and multitasking. The 256Mx16 organization offers a good balance between density and bus width, simplifying PCB layout and routing.
推薦
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-DI provides high-speed packet buffering and routing table storage. Its DDR3-1600 data rate ensures low latency for data forwarding, while the 4Gb density accommodates large forwarding tables. The 1.35V supply reduces power dissipation in dense line cards, and the industrial temperature range supports outdoor and harsh environment deployments. The 96-ball TFBGA package allows high-density board assembly, critical for space-constrained networking modules.
推薦
Industrial Automation
The NT5CB256M16CP-DI is designed for industrial automation controllers, PLCs, and robotics. Its extended temperature range (-40°C to +95°C) ensures reliable operation in factory floors and outdoor installations. The 1.35V low-voltage operation reduces heat generation, improving system reliability. With 4Gb density, it can store large program code and data logs. The device's on-die termination and differential clock inputs enhance signal integrity in noisy industrial environments, reducing bit errors.
推薦
Automotive Infotainment
The NT5CB256M16CP-DI is AEC-Q100 qualified for automotive applications, making it suitable for infotainment systems, instrument clusters, and ADAS. It operates over the automotive temperature range (-40°C to +105°C) and meets stringent reliability requirements. The 1.35V supply reduces power consumption in vehicles, and the 4Gb density supports navigation maps, multimedia, and real-time sensor data. The TFBGA-96 package is robust against vibration and thermal cycling, ensuring long-term durability.
推薦
Solid-State Drives (SSD)
In SSDs, the NT5CB256M16CP-DI is used as a DRAM cache or buffer for FTL (Flash Translation Layer) tables. Its high data rate (1600 Mbps) enables fast read/write operations, while the 4Gb density provides ample cache capacity. The low 1.35V operation reduces power consumption, extending battery life in portable SSDs. The industrial temperature range supports enterprise and industrial SSDs that operate in demanding environments. The 256Mx16 organization offers high bandwidth for parallel data access.
推薦
Test and Measurement
The NT5CB256M16CP-DI is used in oscilloscopes, logic analyzers, and data acquisition systems for high-speed data buffering. Its DDR3-1600 data rate supports high-sample-rate capture, and the 4Gb density allows long recording times. The 1.35V supply reduces heat in benchtop instruments, and the industrial temperature range ensures accuracy in varying lab conditions. The TFBGA-96 package enables compact instrument designs, and the device's low power consumption contributes to energy-efficient operation.
推薦
推薦產品摘要
工程參考資料，適用於 NT5CB256M16CP-DI — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CB256M16DP-DI | NT5CB256M16CP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA | IS43TR16512B-125K |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Micron Technology | Samsung Electronics | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) |
| CAS Latency | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 |
主要差異化特點
- Automotive temperature range up to +105°C (對比MT41K256M16HA-125)
- AEC-Q100 qualified (對比K4B4G1646E-BYMA)
- Wide operating temperature range (對比IS43TR16512B-125K)
設計說明
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within +/-20 mils for data groups and +/-50 mils for address/command. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.
The NT5CB256M16CP-DI requires a stable 1.35V supply (VDD and VDDQ) and a reference voltage (VREF) at 0.675V (half of VDD). Use a low-noise LDO or a dedicated DDR3L power solution to provide these rails. Ensure the power supply can handle peak current spikes during read/write operations. Place bulk capacitors (10uF) near the memory power pins and add ferrite beads to isolate VDDQ from VDD if needed.
The TFBGA-96 package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications up to 95°C ambient, ensure adequate airflow or a heatsink if the memory is heavily accessed. The maximum junction temperature is 115°C for industrial grade. Calculate power dissipation based on operating frequency and load; typical DDR3L power is around 1-2W for 4Gb at 1600 Mbps. Provide thermal vias under the package to improve heat dissipation.
合規資訊
RoHS and REACH compliant per Abacus Technologies. AEC-Q100 qualified for automotive applications. Conflict-free per DRC status.
