H5TC4G63CFR-PBL vs NT5CC256M16DP-DI 对比
详细并排对比 H5TC4G63CFR-PBL 出自 SK hynix 和 NT5CC256M16DP-DI 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63CFR-PBL | NT5CC256M16DP-DI |
|---|---|---|
| 品牌 | SK hynix | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb (256M x 16) | — |
| 电源电压 | 1.35 V | 1.35V |
| 数据速率 | 1600 Mbps (PC3L-12800) | 1600 Mbps/pin (800MHz) |
| 封装 | 96-ball FBGA (TFBGA) | VFBGA-96 |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Form | BALL | — |
| Burst Length | 8 | 8, 4 (with burst chop) |
| CAS 延迟 | 11, 12, 13 | 11, 12, 13 (programmable) |
| Number of Banks | 8 | 8 |
| Refresh Period | 7.8 us at 85C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Density | — | 4Gb |
| 存储组织 | — | 256M x 16 |
| 工作温度范围 | — | -40°C to +95°C (industrial) |
| 接口 | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |