H5TC4G63CFR-PBL vs NT5CC256M16DP-DI Comparison
Detailed side-by-side comparison of H5TC4G63CFR-PBL by SK hynix and NT5CC256M16DP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63CFR-PBL
H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63CFR-PBL β ActiveNanya Technology
NT5CC256M16DP-DI
NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16DP-DI β ActiveSpecification Comparison
| Parameter | H5TC4G63CFR-PBL | NT5CC256M16DP-DI |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | β |
| Supply Voltage | 1.35 V | 1.35V |
| Data Rate | 1600 Mbps (PC3L-12800) | 1600 Mbps/pin (800MHz) |
| Package | 96-ball FBGA (TFBGA) | VFBGA-96 |
| Number of Terminals | 96 | β |
| Package Shape | RECTANGULAR | β |
| Terminal Form | BALL | β |
| Burst Length | 8 | 8, 4 (with burst chop) |
| CAS Latency | 11, 12, 13 | 11, 12, 13 (programmable) |
| Number of Banks | 8 | 8 |
| Refresh Period | 7.8 us at 85C | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Density | β | 4Gb |
| Organization | β | 256M x 16 |
| Operating Temperature Range | β | -40Β°C to +95Β°C (industrial) |
| Interface | β | Differential clock (CK, CK#) |
| Refresh | β | Auto-refresh and self-refresh |
| On-Die Termination | β | Yes (ODT) |