IRF540NSTRLPBF vs IRF2907ZSTRLPBF 对比

详细并排对比 IRF540NSTRLPBF 出自 Infineon 和 IRF2907ZSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF ✓ 量产中

规格对比

参数 IRF540NSTRLPBF IRF2907ZSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.55
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET) IR HEXFET / IR MOSFET
Drain-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 33 A —
Pulsed Drain Current (Idm) 110 A (per datasheet pulse curve) —
On-Resistance Rds(on) max at Vgs=10V 44 mOhm —
Gate Threshold Voltage Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge Qg 47.3 nC (typical) —
Power Dissipation (Pd) at Tc=25C 130 W —
工作温度范围 -55 C to +175 C —
封装 D2PAK (TO-263), surface mount D2PAK (TO-263AB) surface mount
安装类型 Surface Mount Surface Mount (SMD)
Packaging Tape & Reel (13-inch reel) Tape and Reel (left orientation)
RoHS 状态 Compliant (Pb-free) Compliant
Avalanche Energy Rated Yes (HEXFET ruggedized) —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
连续漏极电流(TC=25°C) — 170 A
连续漏极电流(TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
工作结温 — -55 C to +175 C
引脚数量 — 3 (Gate, Drain, Source)
Lead-Free — Yes (PBF suffix)
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

数据手册与资源

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