IRF540NSTRLPBF vs IRF2907ZSTRLPBF Comparison
Detailed side-by-side comparison of IRF540NSTRLPBF by Infineon and IRF2907ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540NSTRLPBF | IRF2907ZSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | IR HEXFET / IR MOSFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | D2PAK (TO-263), surface mount | D2PAK (TO-263AB) surface mount |
| Mounting Type | Surface Mount | Surface Mount (SMD) |
| Packaging | Tape & Reel (13-inch reel) | Tape and Reel (left orientation) |
| RoHS Status | Compliant (Pb-free) | Compliant |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage V(BR)DSS | — | 75 V |
| Continuous Drain Current (TC=25°C) | — | 170 A |
| Continuous Drain Current (TC=100°C) | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS = 10 V | — | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | — | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | — | 300 W |
| Operating Junction Temperature | — | -55 C to +175 C |
| Pin Count | — | 3 (Gate, Drain, Source) |
| Lead-Free | — | Yes (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche allowed up to TJ(max) |