K4A4G085WE-BCRC vs K4A4G085WD-BCRC 对比
详细并排对比 K4A4G085WE-BCRC 出自 Samsung Electronics 和 K4A4G085WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WE-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.36 | $3.58 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2400 Mbps | 2400 Mb/s (PC2400) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| 封装 | FBGA-78 | FBGA-78 (TFBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| 接口 | Parallel | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| RoHS 状态 | Compliant (per LCSC listing) | [DATA_NEEDED: RoHS Status] |
| Memory Density | — | 4 Gbit |
| 电源电压 | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| 工作温度范围 | — | [DATA_NEEDED: Operating Temperature Range] |