K4A4G085WE-BCRC vs K4A4G085WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WE-BCRC by Samsung Electronics and K4A4G085WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WE-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.36 | $3.58 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Data Rate | 2400 Mbps | 2400 Mb/s (PC2400) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Package | FBGA-78 | FBGA-78 (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Interface | Parallel | Parallel |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| MSL Level | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| RoHS Status | Compliant (per LCSC listing) | [DATA_NEEDED: RoHS Status] |
| Memory Density | — | 4 Gbit |
| Supply Voltage | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Operating Temperature Range | — | [DATA_NEEDED: Operating Temperature Range] |