K4B4G1646D-BPH90 vs IS43TR16256A-125KBL 对比
详细并排对比 K4B4G1646D-BPH90 出自 Samsung Electronics 和 IS43TR16256A-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL ✓ 量产中规格对比
| 参数 | K4B4G1646D-BPH90 | IS43TR16256A-125KBL |
|---|---|---|
| 品牌 | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.60 | $19.09 |
| 存储器类型 | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | — |
| 存储组织 | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| 数据速率 | 2133 Mb/s per pin | 1600MT/s |
| 电源电压 | 1.35V (DDR3L) | — |
| 封装 | 96FBGA | 96-TWBGA (9x13mm) |
| 工作温度 | 0°C to +85°C | 0°C to +95°C (Tc) |
| CAS 延迟 | Programmable up to 14 | 11 |
| Burst Length | 8, 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| 存储容量 | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Supply Voltage (VDD) | — | 1.5V ± 0.075V |
| Supply Voltage (VDDQ) | — | 1.5V ± 0.075V |
| 安装类型 | — | Surface Mount |
| RoHS | — | Compliant |
| 引脚数 | — | 96 |