K4B4G1646D-BPH90 vs IS43TR16256A-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and IS43TR16256A-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 β ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BPH90 | IS43TR16256A-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.60 | $19.09 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | β |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | β |
| Data Rate | 2133 Mb/s per pin | 1600MT/s |
| Supply Voltage | 1.35V (DDR3L) | β |
| Package | 96FBGA | 96-TWBGA (9x13mm) |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +95Β°C (Tc) |
| CAS Latency | Programmable up to 14 | 11 |
| Burst Length | 8, 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes | β |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 20 ns |
| Supply Voltage (VDD) | β | 1.5V Β± 0.075V |
| Supply Voltage (VDDQ) | β | 1.5V Β± 0.075V |
| Mounting Type | β | Surface Mount |
| RoHS | β | Compliant |
| Number of Pins | β | 96 |