K4B4G1646D-BPH90 vs IS43TR16256A-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and IS43TR16256A-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BPH90 | IS43TR16256A-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $19.09 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | — |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Data Rate | 2133 Mb/s per pin | 1600MT/s |
| Supply Voltage | 1.35V (DDR3L) | — |
| Package | 96FBGA | 96-TWBGA (9x13mm) |
| Operating Temperature | 0°C to +85°C | 0°C to +95°C (Tc) |
| CAS Latency | Programmable up to 14 | 11 |
| Burst Length | 8, 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Supply Voltage (VDD) | — | 1.5V ± 0.075V |
| Supply Voltage (VDDQ) | — | 1.5V ± 0.075V |
| Mounting Type | — | Surface Mount |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |