NT6AN8T0SA vs K4A8G085WB-BIWE 对比
详细并排对比 NT6AN8T0SA 出自 Nanya Technology 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT6AN8T0SA | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.88 | $6.50 |
| 存储器类型 | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| 存储组织 | 64M x 32 | — |
| 电源电压 | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | — |
| 数据速率 | 1066 Mbps (533 MHz) | 3200 Mbps |
| 工作温度范围 | -30°C to +85°C | — |
| 封装 | FBGA | 78-FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| 工作温度 | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS 延迟 | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| 无卤 | — | Yes |