NT6AN8T0SA vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of NT6AN8T0SA by Nanya Technology and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T0SA | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organization | 64M x 32 | — |
| Supply Voltage | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | — |
| Data Rate | 1066 Mbps (533 MHz) | 3200 Mbps |
| Operating Temperature Range | -30°C to +85°C | — |
| Package | FBGA | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Operating Temperature | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Halogen Free | — | Yes |