NT6AN8T0SA vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of NT6AN8T0SA by Nanya Technology and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β ActiveSpecification Comparison
| Parameter | NT6AN8T0SA | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.88 | $6.50 |
| Memory Type | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | β |
| Organization | 64M x 32 | β |
| Supply Voltage | 1.2V | 1.2 V |
| I/O Voltage | 1.2V | β |
| Data Rate | 1066 Mbps (533 MHz) | 3200 Mbps |
| Operating Temperature Range | -30Β°C to +85Β°C | β |
| Package | FBGA | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85Β°C | β |
| Burst Length | 4 or 8 | β |
| On-Die Termination | Yes | β |
| DLL | Yes | β |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 1G x 8 |
| Operating Temperature | β | 0Β°C to +85Β°C |
| Memory Interface | β | Parallel |
| Access Time | β | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| Refresh | β | Auto-refresh, self-refresh |
| Halogen-Free | β | Yes |