NT6AN8T6WBJ1B1 vs NT6AN8T0SA 对比
详细并排对比 NT6AN8T6WBJ1B1 出自 Nanya Technology 和 NT6AN8T0SA 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT6AN8T6WBJ1B1 | NT6AN8T0SA |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.75 | $2.88 |
| 存储器类型 | DDR4 SDRAM | LPDDR2 SDRAM |
| 存储容量 | 8 Gb (512M x 16) | — |
| 数据速率 | 3200 MT/s | 1066 Mbps (533 MHz) |
| 电源电压 | 1.2 V | 1.2V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS 延迟 | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | 4 or 8 |
| 封装 | 96-ball FBGA | FBGA |
| 工作温度 | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS 状态 | Compliant | Compliant |
| Density | — | 2Gb |
| 存储组织 | — | 64M x 32 |
| I/O Voltage | — | 1.2V |
| 工作温度范围 | — | -30°C to +85°C |
| 安装类型 | — | Surface Mount |
| Lead-Free | — | Yes |
| Refresh Period | — | 64ms at 85°C |
| DLL | — | Yes |