NT6AN8T6WBJ1B1 vs NT6AN8T0SA Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and NT6AN8T0SA by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T6WBJ1B1 | NT6AN8T0SA |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | LPDDR2 SDRAM |
| Memory Size | 8 Gb (512M x 16) | — |
| Data Rate | 3200 MT/s | 1066 Mbps (533 MHz) |
| Supply Voltage | 1.2 V | 1.2V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS Latency | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | 4 or 8 |
| Package | 96-ball FBGA | FBGA |
| Operating Temperature | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS Status | Compliant | Compliant |
| Density | — | 2Gb |
| Organization | — | 64M x 32 |
| I/O Voltage | — | 1.2V |
| Operating Temperature Range | — | -30°C to +85°C |
| Mounting Type | — | Surface Mount |
| Lead-Free | — | Yes |
| Refresh Period | — | 64ms at 85°C |
| DLL | — | Yes |