YZ48G08V-F9HPI-M vs K4A8G085WC-BIWE 对比
详细并排对比 YZ48G08V-F9HPI-M 出自 Loongtion 和 K4A8G085WC-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | YZ48G08V-F9HPI-M | K4A8G085WC-BIWE |
|---|---|---|
| 品牌 | Loongtion | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.20 | $6.29 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 1G x 8 | 1G x 8 |
| 数据速率 | 3200 MT/s | 3200 Mbps |
| 电源电压 | 1.2 V | — |
| 工作温度范围 | -40°C to +85°C | -40°C to +95°C |
| Package Type | FBGA78 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel | POD-12 |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | 22 (CL22) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| RoHS 状态 | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| 封装 | — | 78-FBGA |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |