YZ48G08V-F9HPI-M vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of YZ48G08V-F9HPI-M by Loongtion and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | YZ48G08V-F9HPI-M | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Loongtion | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Supply Voltage | 1.2 V | — |
| Operating Temperature Range | -40°C to +85°C | -40°C to +95°C |
| Package Type | FBGA78 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | POD-12 |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 (CL22) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Package | — | 78-FBGA |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |