H9JCNNNBK3MLYR-N6E-SK - 16Gb LPDDR5-6400 SDRAM | SK Hynix | TFBGA-315
料号： H9JCNNNBK3MLYR-N6E-SK ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $30.46 | $30.46 |
| 10 | $28.5 | $285.00 |
| 100 | $25.9 | $2,590.00 |
| 500 | $23.2 | $11,600.00 |
| 1,000 | $20.85 | $20,850.00 |
H9JCNNNBK3MLYR-N6E-SK 概述
LPDDR5 (Low-Power Double Data Rate 5) SDRAM is a JEDEC-defined volatile memory standard designed as the successor to LPDDR4/4X for smartphones, tablets, ultra-thin notebooks, AI edge devices, and automotive infotainment. It belongs to the SDRAM -> DRAM -> volatile memory -> memory IC hierarchy. Compared with LPDDR4X, LPDDR5 doubles peak bandwidth to 6400 Mbps, introduces lower VDD voltages for energy efficiency, and adds on-die ECC and Decision Feedback Equalization (DFE) for signal integrity at high speeds.
Key differentiating parameters include the 6400 Mbps data rate, 16-bit bus width, four-channel internal architecture, 1.05 V VDDQ, and an operating temperature range of -55C to +125C (industrial-grade, the widest grade in the H9JCNNN family). The device supports deep-sleep and power-down modes for sub-mW standby current. The 315-ball TFBGA package provides a low-profile footprint suitable for height-constrained mobile designs.
The architecture is built on SK Hynix's advanced 1y-nm DRAM process, integrating the PMIC interface commands, frequency set, and refresh management defined by JEDEC JESD209-5. The dual-channel configuration enables parallel access for application processors, AI accelerators, and GPUs sharing the same memory pool. Built-in ECC mitigates single-bit soft errors at sub-20 nm nodes.
Typical applications include flagship smartphone main memory, AI edge inference modules, ultra-thin notebook DRAM, automotive infotainment and ADAS platforms, and high-bandwidth industrial controllers. It pairs naturally with Snapdragon 8-series, MediaTek Dimensity, and Apple A-series application processors that natively support LPDDR5-6400 interfaces.
Designers must route the 16-bit data bus as length-matched differential pairs with controlled impedance (typically 85 ohm differential), place a 0.1 uF + 1 uF decoupling capacitor network near each VDD/VDDQ ball, and follow SK Hynix reference PCB layout for the 315-ball TFBGA land pattern. The -SK suffix indicates SK Hynix branded reel/tray packaging.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing engineering value beyond simple spec repetition.
直接替换替代料： H9JCNNNBK3MLYR-N6E-SK ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H9JCNNNBK3MLYR-N6E-SK （相同外形与封装尺寸） ——差异在于 Data Rate, Memory Type, Package.
快速对比工具——选择替代料号进行并排对比：
H9JCNNNBK3MLYR-N6E
✅ 直接替换✓ 有现货
$24.37 / 个
查看数据手册 →H9JCNNNBK3MLYR-N6E-ND
✅ 直接替换📋 参考替代料（不在目录中）
H9JCNNNBK3MLYR
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
H9JCNNNBK3MLYR-N6E-SK
✅ 直接替换✓ 有现货
$20.85 / 个
查看数据手册 →H9JCNNNBK3MLYR-N6E-SK 最大额定值与电气特性
| 存储器类型 | Volatile - DRAM (LPDDR5 SDRAM) |
| Density | 16 Gb (2 GB) |
| 存储组织 | 512M x 32 |
| 数据速率 | 6400 Mbps (LPDDR5-6400) |
| Bus Width | 16-bit |
| Channel Architecture | Dual-channel (per datasheet family) |
| VDD (Core Supply) | 1.05 V (range 1.01 V to 1.12 V) |
| VDDQ (I/O Supply) | 1.8 V (range 1.7 V to 1.95 V) |
| 工作温度 | -55C to +125C |
| 封装 | 315-ball TFBGA (12 x 12 mm) |
| 安装类型 | Surface Mount |
| JEDEC Standard | JESD209-5 (LPDDR5) |
| On-die ECC | Yes (per LPDDR5 base spec) |
| RoHS 状态 | Compliant |
H9JCNNNBK3MLYR-N6E-SK 315-ball tfbga (12 x 12 mm) 引脚配置指南
H9JCNNNBK3MLYR-N6E-SK（315-ball tfbga (12 x 12 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H9JCNNNBK3MLYR-N6E-SK.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H9JCNNNBK3MLYR-N6E-SK 适用于 7 应用s: Flagship Smartphone Main Memory, AI Edge Inference Module, Ultra-Thin Notebook DRAM, Automotive Infotainment and ADAS Platform, Industrial IoT Gateway, AR/VR Headset Memory Subsystem, 5G Mobile Hotspot and Fixed Wireless Access.
Flagship Smartphone Main Memory
The H9JCNNNBK3MLYR-N6E-SK delivers 6400 Mbps per-pin data rate with 16-bit bus width, achieving 12.8 GB/s peak bandwidth per channel - the sweet spot for flagship Snapdragon 8-series and MediaTek Dimensity 9000+ application processors. Its 1.05 V VDD core supply (1.01 V to 1.12 V range) reduces platform power by approximately 20% versus LPDDR4X at equivalent throughput. The 315-ball TFBGA (12 x 12 mm) is height-optimized for sub-7.5 mm smartphone chassis, while on-die ECC and DFE equalization preserve signal integrity at high switching rates. Compared with discrete DRAM, this single-package LPDDR5 reduces PCB area by 30%.
推荐
AI Edge Inference Module
Edge AI accelerators such as Qualcomm AI Engine, MediaTek APU, and Hailo-8 require sustained 10+ GB/s memory bandwidth for transformer and CNN inference workloads. The H9JCNNNBK3MLYR-N6E-SK provides 12.8 GB/s peak per channel with the deep-sleep low-power state defined in JEDEC JESD209-5, enabling always-on edge devices to drop to sub-1 mW standby between inference events. The -55C to +125C industrial temperature range supports outdoor deployments (smart city, industrial IoT, robotics). Combined with ECC, it meets the data integrity requirements for inference at >10 TOPS.
推荐
Ultra-Thin Notebook DRAM
Modern ultra-thin notebooks (sub-15 mm chassis) require LPDDR5 for both performance and battery life. The H9JCNNNBK3MLYR-N6E-SK's 6400 Mbps data rate and 1.05 V core supply directly extend battery run-time by 15% to 25% versus LPDDR4X platforms at equivalent screen-on workload. The 315-ball TFBGA integrates tightly onto the mainboard adjacent to Intel Core Ultra or AMD Ryzen U/H-series mobile processors. On-die ECC mitigates soft errors during long-running productivity and content creation workloads. SK Hynix family roadmap ensures long-term platform support.
推荐
Automotive Infotainment and ADAS Platform
The H9JCNNNBK3MLYR-N6E-SK's industrial -55C to +125C operating temperature and LPDDR5-6400 bandwidth make it suitable for next-generation digital cockpit and ADAS domain controllers. Centralized cockpit SoCs such as Qualcomm 8295 and Samsung Exynos Auto V920 require multiple LPDDR5 channels to drive multi-display (cluster, IVI, AR-HUD) and surround-view perception workloads simultaneously. The 12.8 GB/s per channel enables 8K IVI streaming with concurrent ADAS perception processing. On-die ECC supports ASIL-B functional safety target.
推荐
Industrial IoT Gateway
Industrial IoT gateways aggregate sensor data from multiple field buses (PROFINET, EtherCAT, Modbus) and require resilient, wide-temperature memory for factory automation deployments. The H9JCNNNBK3MLYR-N6E-SK provides the bandwidth needed for real-time analytics while the -55C to +125C rating survives unheated cabinet environments. The 315-ball TFBGA is compatible with standard reflow profiles and supports conformal coating for harsh environments. On-die ECC and JEDEC JESD209-5 compliance ensure predictable behavior in 24/7 operation.
推荐
AR/VR Headset Memory Subsystem
Standalone AR/VR headsets (Meta Quest 3, Apple Vision Pro class) demand extreme bandwidth for stereoscopic rendering at 90 Hz+ refresh rates, plus low power for thermal comfort. The H9JCNNNBK3MLYR-N6E-SK delivers 12.8 GB/s per channel from a 1.05 V core, balancing the throughput-power equation required for always-on XR experiences. The 315-ball TFBGA fits within headset SoM constraints and pairs naturally with XR-dedicated SoCs such as Qualcomm XR2 Gen 2 and the upcoming XR2+ Gen 2 platforms. Low-latency write paths support eye-tracking and passthrough camera pipelines.
推荐
5G Mobile Hotspot and Fixed Wireless Access
5G FWA CPE and mobile hotspots aggregate multi-gigabit radio throughput while serving Wi-Fi 6E/7 LAN and USB-C tethering. The H9JCNNNBK3MLYR-N6E-SK's 12.8 GB/s bandwidth supports the per-packet buffer and encryption workload of 5G NR Release 16/17 modems such as Qualcomm Snapdragon X75 and MediaTek T830. Its low standby current (sub-1 mW in deep-sleep per JEDEC JESD209-5) extends battery life in mobile hotspot use cases. Industrial temperature rating enables outdoor FWA deployments.
推荐
推荐产品汇总
工程参考数据： H9JCNNNBK3MLYR-N6E-SK ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H9JCNNNBK3MLYR-N6E | H9JCNNNBK3MLYR-N6E-ND | H9JCNNNBK3MLYR | MT62F1G32D4DR-026 WT:B |
|---|---|---|---|---|---|
| Package | 315-ball TFBGA | 315-ball TFBGA (same) | 315-ball TFBGA (same) | 315-ball TFBGA (same) | 200-ball TFBGA (different) |
| Brand | SK Hynix | SK Hynix (same) | SK Hynix (same) | SK Hynix (same) | Micron Technology |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb (8 Gb per channel x2) |
| Data Rate | 6400 Mbps | 6400 Mbps | 6400 Mbps | 6400 Mbps | 6400 Mbps |
| Bus Width | 16-bit | 16-bit | 16-bit | 16-bit | 32-bit |
| VDD (Core) | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Industrial-grade -55C to +125C temperature range （对比 H9JCNNNBK3MLYR-N6E (consumer temperature grade))
- LPDDR5-6400 peak data rate (12.8 GB/s per channel) （对比 LPDDR4X-4266 (8.5 GB/s per channel))
- 315-ball TFBGA form factor standardized for mobile SoCs （对比 Micron MT62F1G32D4DR (200-ball TFBGA))
设计说明
Route the H9JCNNNBK3MLYR-N6E-SK 16-bit DQ bus and DQS strobe pairs as length-matched differential pairs with 85 ohm differential impedance. Place the SoC within 15 mm of the TFBGA to minimize stub length, and use 0.1 uF plus 1 uF X7R ceramic decoupling on every VDD and VDDQ pin. Add a ZQ calibration resistor (240 ohm 1%) on the ZQ ball to ground for impedance calibration. Reference the application processor (Snapdragon, Dimensity, Core Ultra) vendor layout guidelines for via pattern and ball-via antipad dimensions.
LPDDR5-6400 requires Decision Feedback Equalization (DFE) to be enabled in the SoC memory controller per JEDEC JESD209-5. The H9JCNNNBK3MLYR-N6E-SK supports write/read leveling and gate training; allow at least 200 us for initial training during boot. Use a 4-layer PCB minimum with continuous ground reference under the BGA; 6-layer stackup is recommended for chassis-integrated mobile designs. Estimated eye margin at the DRAM balls should exceed 0.4 UI at 6400 Mbps per the LPDDR5 compliance mask.
Estimated: at continuous 6400 Mbps with 100% bus utilization, the H9JCNNNBK3MLYR-N6E-SK dissipates approximately 1.0 W to 1.5 W in active mode (industry-typical for LPDDR5-6400 16 Gb). With TFBGA theta_JA around 25 C/W on a 4-layer JEDEC test PCB, junction temperature rises 25C to 40C above ambient. For smartphone chassis at +40C ambient, derate activity factor or improve PCB copper thermal spreading. Most LPDDR5 designs rely on passive cooling without heatsinks.
Do not confuse H9JCNNNBK3MLYR-N6E-SK with the older H9JCNN series LPDDR4X parts; pinout and PMIC commands differ. Ensure the PMIC used (such as Qualcomm PM8550, MediaTek MT6319) supports LPDDR5-6400 specifically and not only LPDDR5-5500. Verify the boot firmware enables the correct MR (Mode Register) settings for the 6400 Mbps data rate before mass production. Cross-check date code and tray condition by RFQ; obsolete date codes may not meet JEDEC timing windows.
合规信息
RoHS compliant per JLCPCB parts catalog (2026-09-17). Industrial-grade (-55C to +125C) operating range; not AEC-Q100 qualified - confirm specific automotive SKU with SK Hynix for ISO 26262 deployments. JEDEC JESD209-5 LPDDR5 standard compliance.
