MT40A256M16GE-075E AAT:B - 4Gb DDR4 SDRAM 256Mx16 96-FBGA | Micron
料号： MT40A256M16GE-075E AAT:B ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $11.25 | $11.25 |
| 10 | $8.125 | $81.25 |
| 100 | $7.1875 | $718.75 |
| 500 | $6.875 | $3,437.50 |
| 1,000 | $6.5625 | $6,562.50 |
MT40A256M16GE-075E AAT:B 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous DRAM) is the fourth generation of DDR memory, introduced in 2014 as the successor to DDR3. It doubles the data rate per pin compared with DDR3, operates at a lower 1.2 V VDD/VDDQ supply (versus 1.5 V for DDR3), and introduces POD (Pseudo Open Drain) signalling, bank-grouping, and finer-grained refresh. DDR4 occupies the position DRAM -> volatile memory -> memory IC -> semiconductor in the component hierarchy and remains the dominant PC/server/embedded DRAM standard as of 2026, coexisting with the newer DDR5 in mainstream compute.
Key features of the MT40A256M16GE-075E AAT:B include a 1.33 GHz maximum clock rate translating to 2666 MT/s peak transfer rate, a 1.14 V to 1.26 V supply-voltage window (1.2 V nominal), and a parallel interface supporting x16 data width. The die is organized as 8 banks with bank-grouping for improved concurrency, and on-die termination (ODT) is included for signal-integrity control. Temperature-controlled refresh (TCR) is supported to lower self-refresh current at moderate temperatures. The 96-FBGA (9x14 mm) footprint follows the JEDEC-standard x16 DDR4 outline, enabling PCB layout compatibility with industry-standard 4 Gbit x16 DDR4 parts.
Architecturally, this device uses Micron's advanced 20 nm-class process node and a sub-byte-write capable 16-bit I/O. The -075E speed sort yields a tCK of 0.75 ns (1333 MHz base, 2666 MT/s effective). On-chip DLL and 1.2 V VPP support simplify board design versus legacy DDR3 platforms that need 2.5 V VPP.
Typical applications include automotive infotainment, digital instrument clusters, ADAS compute platforms, industrial embedded controllers, and ruggedized networking gear where AEC-Q100 reliability is mandated. The wide 256M x 16 organization suits frame-store, lookup-table memory, and graphics frame buffers. The AAT suffix denotes the automotive temperature grade (-40C to +105C), and the AAT:B marking indicates lead-free RoHS compliance.
A key design consideration is that this part is reported by Micron as obsolete/legacy in their part catalog (referenced May 2026); engineering teams planning new designs should evaluate MT40A256M16GE-075E-IT (industrial) or -AUT (extended automotive) suffixes, or migrate to MT40A512M16 DDR4 8 Gbit or 16 Gbit density migration paths. Signal-integrity, terminations, and VTT must follow JEDEC DDR4 layout rules.
This page synthesizes distributor pricing, drop-in alternatives (including the verified HGCHIPS HGD44G16M26 cross-vendor replacement), and engineering guidance not found in the standalone manufacturer datasheet.
直接替换替代料： MT40A256M16GE-075E AAT:B ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT40A256M16GE-075E:B
✓ 有现货
$3.95 / 个
查看数据手册 →MT40A256M16GE-075E AIT:B
📋 参考替代料（不在目录中）
MT40A256M16GE-075E AUT:B
📋 参考替代料（不在目录中）
MT40A256M16GE-075E-IT
📋 参考替代料（不在目录中）
MT40A256M16GE-083E AIT:B
📋 参考替代料（不在目录中）
HGD44G16M26
📋 参考替代料（不在目录中）
MT40A256M16GE-075E AAT:B 最大额定值与电气特性
| 存储器类型 | Volatile DRAM (DDR4 SDRAM) |
| 存储容量 | 4 Gbit |
| Memory Organization | 256M x 16 |
| 接口 | Parallel |
| 最大时钟频率 | 1.33 GHz |
| 数据速率 | DDR4-2666 MT/s |
| Speed Grade | -075E (tCK 0.75 ns) |
| Access Time | 19 ns |
| Write Cycle Time (Word/Page) | 15 ns |
| Supply Voltage (VDD/VDDQV) | 1.14 V to 1.26 V (1.2 V nominal) |
| 封装 | 96-FBGA (9 x 14 mm) |
| 安装类型 | Surface Mount |
| Automotive Grade (AAT suffix) | AEC-Q100 qualified |
| 工作温度 | -40C to +105C (AAT automotive grade) |
| RoHS / Lead-Free Status | Compliant (lead-free, AAT:B) |
| Packaging | Tape & Reel (TR) |
| Bank Organization | 8 banks (with bank-grouping) |
| On-Die Termination (ODT) | Supported |
| Temperature Controlled Refresh (TCR) | Supported |
MT40A256M16GE-075E AAT:B 96-fbga (9 x 14 mm) 引脚配置指南
MT40A256M16GE-075E AAT:B（96-fbga (9 x 14 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A256M16GE-075E AAT:B.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A256M16GE-075E AAT:B 适用于 7 应用s: Automotive Infotainment System Memory, Digital Instrument Cluster Memory, ADAS Domain Controller Memory, Industrial Embedded Controller Memory, Networking and Telecommunications Equipment, Medical Imaging and Diagnostic Equipment, Ruggedized Server and Storage Memory.
Automotive Infotainment System Memory
The MT40A256M16GE-075E AAT:B serves as main DRAM for automotive infotainment head units, where 4 Gbit capacity and 2666 MT/s bandwidth handle HMI graphics, navigation maps, and audio/video buffering. Its AEC-Q100 AAT qualification (-40C to +105C) is required for cabin-mounted modules that experience wide thermal swings. The 256M x 16 organization provides 512 MB, sufficient for entry-level infotainment OS images. Compared with LPDDR4, DDR4 x16 offers lower per-bit cost at moderate bandwidth.
推荐
Digital Instrument Cluster Memory
The MT40A256M16GE-075E AAT:B is well-matched to digital instrument cluster designs that need AEC-Q100 reliability and a moderate 512 MB frame buffer for rendering gauges, HUD projections, and 2D/3D graphics. Its 2666 MT/s bandwidth comfortably handles dual-display cluster rendering at 60-120 Hz refresh. The 96-FBGA 9x14 mm footprint simplifies PCB routing alongside the cluster SoC, and its 1.2 V operation keeps power dissipation within automotive thermal budgets of 5-7W per module.
推荐
ADAS Domain Controller Memory
The MT40A256M16GE-075E AAT:B provides 512 MB of DDR4 storage for ADAS domain controllers handling sensor-fusion data, where AEC-Q100 AAT grade supports cabin-edge thermal environments. Its 16-bit-wide parallel interface simplifies layout versus x8/x32 parts, and the 1.33 GHz clock delivers the throughput required for radar pre-processing buffers. Engineers should note that newer ADAS designs typically require 8-16 Gbit densities, so this part suits legacy ADAS only.
推荐
Industrial Embedded Controller Memory
The MT40A256M16GE-075E AAT:B is well-suited to industrial PCs, edge gateways, and HMI controllers requiring automotive-grade reliability in factory environments. Its wide 1.14-1.26 V supply tolerance enables robust operation across noisy industrial rails, while the 2666 MT/s data rate handles machine-vision frame buffering and PLC scan cycles. Although marked obsolete by Micron in 2026, it remains popular for sustaining legacy industrial platforms where redesign is impractical.
推荐
Networking and Telecommunications Equipment
The MT40A256M16GE-075E AAT:B serves as packet-buffer memory in ruggedized routers, switches, and base-station controllers where AEC-Q100 reliability is mandated for outdoor or vehicular deployments. The x16 organization provides an optimal match for 64-bit datapath designs using four parts in parallel, and the 2666 MT/s throughput handles 10 GbE line-rate buffering. The AAT temperature range suits outdoor cabinet installations facing wide daily thermal swings.
推荐
Medical Imaging and Diagnostic Equipment
The MT40A256M16GE-075E AAT:B suits regulated medical devices such as portable ultrasound, patient monitors, and imaging carts where AEC-Q100 automotive reliability translates to long-term field-proven quality. Its 512 MB capacity stores ultrasound frame buffers and patient-record databases, while 2666 MT/s bandwidth handles real-time B-mode imaging at 30 fps. Note: medical-grade certification requires separate IEC 60601 qualification beyond AEC-Q100; verify full system compliance.
推荐
Ruggedized Server and Storage Memory
The MT40A256M16GE-075E AAT:B is used in ruggedized servers and storage appliances deployed in defense, transportation, and energy markets where wide-temperature, high-reliability DRAM is required. Its 4 Gbit density supports 16 GB DIMMs using 36 parts per rank group. The 96-FBGA 9x14 mm footprint integrates cleanly with standard server DIMM PCB layouts, and its 1.2 V operation minimizes power per GB versus older DDR3 parts.
推荐
推荐产品汇总
工程参考数据： MT40A256M16GE-075E AAT:B ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A256M16GE-075E AIT | MT40A256M16GE-075E AUT | MT40A256M16GE-075E-IT | MT40A256M16GE-075E | MT40A256M16GE-083E AIT | HGD44G16M26 |
|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | B: Micron Technology | B: Micron Technology | Micron Technology | B: Micron Technology | B: Micron Technology | HGCHIPS |
| Package | 96-FBGA (9x14 mm) | B: 96-FBGA (9x14 mm) - same | B: 96-FBGA (9x14 mm) - same | 96-FBGA (9x14 mm) - same | B: 96-FBGA (9x14 mm) - same | B: 96-FBGA (9x14 mm) - same | 96-FBGA (9x14 mm) - same |
| Memory Size | 4 Gbit | B: 4 Gbit | B: 4 Gbit | 4 Gbit | B: 4 Gbit | B: 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | B: 256M x 16 | B: 256M x 16 | 256M x 16 | B: 256M x 16 | B: 256M x 16 | 256M x 16 |
| Speed Grade / Data Rate | -075E / DDR4-2666 | B: -075E / DDR4-2666 | B: -075E / DDR4-2666 | -075E / DDR4-2666 | B: -075E / DDR4-2666 | B: -083E / DDR4-2400 (slower) | DDR4-2666 equivalent |
| Temperature Grade | AAT (AEC-Q100, -40C to +105C) | B: AIT (industrial -40C to +85C) | B: AUT (AEC-Q100 grade-1) | IT (industrial) | B: Commercial grade | B: AIT (industrial) | Industrial equivalent |
| AEC-Q100 Qualified | Yes (AAT grade) | B: No (industrial) | B: Yes (AUT grade-1) | No | B: No | B: No | Per HGCHIPS datasheet |
| Lifecycle Status (per Micron 2026 catalog) | Obsolete (AAT:B) | B: Obsolete | B: Obsolete | Obsolete | B: Obsolete | B: Obsolete | Active (HGCHIPS) |
关键差异点
- Verified cross-vendor drop-in replacement available （对比 HGD44G16M26)
- AEC-Q100 AAT automotive qualification built-in （对比 MT40A256M16GE-075E:B)
- DDR4-2666 speed grade (highest in 4 Gbit x16 family) （对比 MT40A256M16GE-083E AIT:B)
设计说明
Per JEDEC DDR4 layout guidelines, route the 96-FBGA (9x14 mm) ball-out with matched-impedance traces for CK/CK#, address/command, and DQ groups. Place VTT termination resistors within 200 mils of the DRAM balls. Use 100 ohm differential impedance for CK/CK# and 50 ohm single-ended for data/address. Maintain length matching within +/- 25 mils for byte-lane DQs. Failure to follow these rules will cause timing violations at DDR4-2666 speeds.
The MT40A256M16GE-075E AAT:B requires three supplies: VDD/VDDQ at 1.14-1.26 V (1.2 V nominal), VPP at 2.5 V, and VDDSPD for the optional serial presence detect EEPROM. Decouple each supply at the DRAM side with a 100 nF ceramic plus a 10 uF bulk capacitor, placed within 100 mils of the balls. Estimated: average IDD active current at DDR4-2666 is ~70 mA per device, so total per-rank power is ~85 mW.
Even though DRAM dissipates relatively low power per device, AEC-Q100 AAT applications must verify junction temperature stays below +105C ambient plus thermal rise. Estimated: 1-piece power is ~85 mW; placing the FBGA over a continuous ground plane provides theta-JA ~30 C/W, well within margin. If two ranks are stacked, monitor with on-die temperature sensor (TS feature) and throttle if reading exceeds 95C.
DDR4 requires on-die termination (ODT) to be enabled for proper signal integrity. Configure the SoC memory controller to use RZQ-based ODT values (typically 240 or 120 ohms) on data, strobe, and mask signals. Enable Write Leveling, Read Calibration, and Gate Training during controller initialization. Failure to run DDR4 training will cause eye-margin violations and intermittent read/write errors, particularly at the 2666 MT/s data rate.
Common pitfalls include omitting VPP decoupling (causes word-line failures during refresh), mis-programming the speed-bin register (causes tCK violations), and using non-AEC-Q100 parts in automotive modules (fails PPAP). Since Micron marks the AAT:B part obsolete in 2026, ensure last-time-buy inventory or migrate to MT40A512M16 8 Gbit or DDR5. Verify ZQ calibration and periodic read training for long-term margin retention.
合规信息
AAT suffix denotes AEC-Q100 automotive qualification per Micron's part-catalog page. AAT:B marking confirms lead-free RoHS compliance. Halogen-free confirmation not present in verified web data - mark unknown.
