MT41K256M16TW-093:P - 4Gbit DDR3L SDRAM 256Mx16 | Micron
料号： MT41K256M16TW-093:P ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $22.23 | $22.23 |
| 10 | $20.5 | $205.00 |
| 100 | $18.75 | $1,875.00 |
| 500 | $17 | $8,500.00 |
| 1,000 | $15.5 | $15,500.00 |
MT41K256M16TW-093:P 概述
DDR3L SDRAM is a low-voltage variant of DDR3 memory, designed to operate at 1.35V while remaining backward-compatible with standard 1.5V DDR3. This reduction in voltage significantly lowers power consumption, making it ideal for power-sensitive applications such as laptops, servers, and industrial electronics. DDR3L is part of the DDR SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, effectively doubling throughput.
Key features include a differential bidirectional data strobe, 8n-bit prefetch architecture, on-die termination (ODT), and ZQ calibration. The device supports auto self-refresh, auto precharge, asynchronous reset, and write leveling, ensuring reliable operation in high-speed systems. The 1.35V operation reduces power dissipation by up to 20% compared to standard DDR3, making it suitable for energy-efficient designs.
The MT41K256M16TW-093:P utilizes Micron's advanced DRAM process technology, providing high-speed data transfer with low latency. The 8n-prefetch architecture enables burst lengths of 8, improving memory bandwidth efficiency. The device also features dynamic on-chip termination, which adjusts termination impedance during writes to improve signal integrity, and write leveling for improved timing margins in multi-rank systems.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. Its 4Gbit density and x16 organization make it ideal for applications requiring high memory capacity with a narrow bus, such as industrial PCs, routers, and test equipment. The 1.35V operation is particularly beneficial in battery-powered devices where power efficiency is critical.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The FBGA package requires careful PCB layout to maintain signal integrity at high frequencies. Refer to the Micron DDR3L datasheet for detailed timing and layout guidelines.
直接替换替代料： MT41K256M16TW-093:P ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT41K256M16TW-093:P （相同外形与封装尺寸） ——差异在于 Package, Memory Type, Supply Voltage, Clock Frequency, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
MT41K256M16TW-107:P
✅ 直接替换✓ 有现货
$16 / 个
查看数据手册 →MT41K256M16TW-093 IT:P
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16HA-125:E
✅ 直接替换✓ 有现货
$3.1 / 个
查看数据手册 →MT41K256M16HA-107G:E
✅ 直接替换✓ 有现货
$4 / 个
查看数据手册 →MT41K256M16RE-125:D
✅ 直接替换✓ 有现货
$4.19 / 个
查看数据手册 →MT41K256M16LY-107:N
✅ 直接替换✓ 有现货
$8.1 / 个
查看数据手册 →MT41K256M16TW-107 AUT:P TR
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16TW-107 IT:P TR
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16TW-093:P 最大额定值与电气特性
| 存储器类型 | SDRAM - DDR3L |
| 存储容量 | 4 Gbit |
| 存储组织 | 256 M x 16 |
| 数据总线宽度 | 16 bit |
| 最大时钟频率 | 1.066 GHz |
| Access Time | 20 ns |
| 电源电压 | 1.35 V (1.5 V compatible) |
| 封装 / 外壳 | 96-FBGA (8x14) |
| 安装类型 | Surface Mount |
| 工作温度 | 0°C to +95°C |
| RoHS 状态 | Compliant |
| REACH Status | Compliant |
| Series | MT41K256M16 |
| Product Category | DRAM |
| Type | SDRAM - DDR3L |
MT41K256M16TW-093:P 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDD — Power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ8 — Data input/output 8 |
| 引脚 B3 | DQ9 — Data input/output 9 |
| 引脚 B4 | VDD — Power supply |
| 引脚 B5 | DQ10 — Data input/output 10 |
| 引脚 B6 | DQ11 — Data input/output 11 |
| 引脚 B7 | VSS — Ground |
| 引脚 B8 | DQ12 — Data input/output 12 |
| 引脚 B9 | DQ13 — Data input/output 13 |
| 引脚 B10 | VDD — Power supply |
| 引脚 B11 | DQ14 — Data input/output 14 |
| 引脚 B12 | DQ15 — Data input/output 15 |
典型应用
MT41K256M16TW-093:P 适用于 6 应用s: Laptop Memory Modules, Networking Equipment, Industrial PCs, Embedded Systems, Test and Measurement Equipment, Server Memory.
Laptop Memory Modules
The MT41K256M16TW-093:P is ideal for laptop memory modules (SO-DIMMs) due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gbit density and x16 organization allow compact module designs with high capacity. The 1.066 GHz clock speed supports fast data transfer for multitasking and multimedia applications. When used in SO-DIMMs, it provides a balance of performance and power efficiency, making it a popular choice for ultrabooks and thin-and-light laptops.
推荐
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16TW-093:P provides high-bandwidth memory for packet buffering and routing tables. Its 1.066 GHz clock and 16-bit data bus enable fast data throughput, while the 1.35V operation reduces heat generation in dense chassis. The FBGA package allows high-density PCB layouts, essential for compact network appliances. Its reliability and wide temperature range make it suitable for 24/7 operation in enterprise environments.
推荐
Industrial PCs
The MT41K256M16TW-093:P is well-suited for industrial PCs that require robust memory in harsh environments. Its 0°C to +95°C operating temperature range ensures reliable performance in factory floors and outdoor installations. The 1.35V operation minimizes power dissipation, reducing thermal stress on surrounding components. With 4Gbit capacity, it supports demanding industrial applications such as machine vision and process control. The FBGA package provides excellent shock and vibration resistance, critical for industrial settings.
推荐
Embedded Systems
For embedded systems like single-board computers and IoT gateways, the MT41K256M16TW-093:P offers a balance of performance and power efficiency. Its 1.35V operation is ideal for battery-powered devices, while the 1.066 GHz clock ensures responsive processing. The x16 organization simplifies PCB routing, reducing design complexity. The device's support for auto self-refresh and power-down modes helps conserve energy in idle states, extending battery life in portable embedded applications.
推荐
Test and Measurement Equipment
In test and measurement equipment such as oscilloscopes and logic analyzers, the MT41K256M16TW-093:P provides high-speed memory for data acquisition and waveform storage. Its 1.066 GHz clock enables fast sampling rates, while the 4Gbit capacity allows long recording times. The 1.35V operation reduces power consumption, which is beneficial for portable instruments. The FBGA package's small footprint helps in designing compact, high-performance test equipment.
推荐
Server Memory
The MT41K256M16TW-093:P can be used in server memory modules (RDIMMs) for entry-level servers and workstations. Its 4Gbit density and x16 organization allow high-capacity modules, while the 1.35V operation reduces power consumption in data centers. The 1.066 GHz clock supports high-bandwidth applications such as virtualization and database processing. The device's reliability and error-handling features make it suitable for 24/7 server operation.
推荐
工程参考数据： MT41K256M16TW-093:P ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K256M16TW-107:P | MT41K256M16HA-125:E | MT41K256M16HA-107G:E |
|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Max Clock Frequency | 1.066 GHz | 933 MHz | 800 MHz | 933 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
关键差异点
- Higher maximum clock frequency (1.066 GHz) compared to alternatives （对比 MT41K256M16TW-107:P)
- Standard temperature grade (0°C to +95°C) with industrial option available （对比 MT41K256M16TW-093 IT:P)
- Newer die revision with improved performance （对比 MT41K256M16HA-125:E)
设计说明
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 80-100 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use ground planes beneath the FBGA package to reduce noise and improve signal integrity.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the pins as possible. Use a 10uF bulk capacitor on the VDD rail to handle transient currents. Ensure the VDD supply is stable and within 1.35V ± 0.1V to meet DDR3L specifications.
The FBGA package has a thermal resistance of approximately 30°C/W. For typical operation, ensure adequate airflow or a heatsink if the ambient temperature exceeds 70°C. Monitor junction temperature to stay within the 95°C maximum rating.
合规信息
RoHS and REACH compliant per distributor data. AEC-Q100 not applicable for standard grade; automotive variants available.
