IPD60R600C6 vs IPD60R380C6ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPD60R600C6 بواسطة Infineon و IPD60R380C6ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPD60R600C6 | IPD60R380C6ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| FET Type | N-Channel | N-Channel |
| Technology | Superjunction (CoolMOS) | CoolMOS C6 Superjunction |
| Drain-to-Source Voltage (V DSS) | 600 V | — |
| Continuous Drain Current (I D) at T C = 25 C | 7.3 A | — |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | 600 mOhm | — |
| Maximum Power Dissipation (P D) at T C = 25 C | 63 W | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical and minimum] | — |
| Gate Charge (Q G) typical | [DATA_NEEDED: Q G value] | — |
| درجة حرارة الوصلة التشغيلية | -55 C to +150 C | — |
| العلبة | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| نوع التركيب | Surface Mount | Surface Mount |
| مستوى MSL | 1 | [DATA_NEEDED: MSL level] |
| حالة RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |