IPD60R600C6 vs IPD60R380C6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R600C6 disebabkan oleh Infineon dan IPD60R380C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R600C6 IPD60R380C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS C6 —
FET Type N-Channel N-Channel
Technology Superjunction (CoolMOS) CoolMOS C6 Superjunction
Drain-to-Source Voltage (V DSS) 600 V —
Continuous Drain Current (I D) at T C = 25 C 7.3 A —
Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V 600 mOhm —
Maximum Power Dissipation (P D) at T C = 25 C 63 W —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical and minimum] —
Gate Charge (Q G) typical [DATA_NEEDED: Q G value] —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Operating Junction Temperature (TJ) — -55C to +150C
Storage Temperature — [DATA_NEEDED: storage temperature]
Drain-Tab Connection — Exposed pad (electrically connected to drain)

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