IPD60R600C6 vs IPD60R380C6ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPD60R600C6 द्वारा Infineon और IPD60R380C6ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IPD60R600C6 | IPD60R380C6ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| FET Type | N-Channel | N-Channel |
| Technology | Superjunction (CoolMOS) | CoolMOS C6 Superjunction |
| Drain-to-Source Voltage (V DSS) | 600 V | — |
| Continuous Drain Current (I D) at T C = 25 C | 7.3 A | — |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | 600 mOhm | — |
| Maximum Power Dissipation (P D) at T C = 25 C | 63 W | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical and minimum] | — |
| Gate Charge (Q G) typical | [DATA_NEEDED: Q G value] | — |
| ऑपरेटिंग जंक्शन तापमान | -55 C to +150 C | — |
| पैकेज | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | 1 | [DATA_NEEDED: MSL level] |
| RoHS स्थिति | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |