IPD60R600C6 vs IPD60R380C6ATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R600C6 dari Infineon dan IPD60R380C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60R600C6 | IPD60R380C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| FET Type | N-Channel | N-Channel |
| Technology | Superjunction (CoolMOS) | CoolMOS C6 Superjunction |
| Drain-to-Source Voltage (V DSS) | 600 V | — |
| Continuous Drain Current (I D) at T C = 25 C | 7.3 A | — |
| Static Drain-to-Source On-Resistance (R DS(on)) max at V GS = 10 V | 600 mOhm | — |
| Maximum Power Dissipation (P D) at T C = 25 C | 63 W | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical and minimum] | — |
| Gate Charge (Q G) typical | [DATA_NEEDED: Q G value] | — |
| Suhu Hubung Kerja | -55 C to +150 C | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |