IRF7306TRPBF vs FDS6575 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRF7306TRPBF بواسطة Infineon و FDS6575 بواسطة onsemi. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRF7306TRPBF | FDS6575 |
|---|---|---|
| العلامة التجارية | Infineon | onsemi |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Polarity | P-Channel (dual) | P-Channel |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | -10 A |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | PowerTrench (rugged gate) |
| نطاق درجة حرارة التشغيل | -55°C to +150°C (junction) | [DATA_NEEDED: operating temperature range] |
| العلبة | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | SOIC-8 (SO-8) |
| نوع التركيب | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| مستوى MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| Drain-Source Voltage (VDS) | — | -20 V |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| جهد عتبة البوابة | — | [DATA_NEEDED: gate threshold voltage range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |
| حالة RoHS | — | Compliant |