IRF7306TRPBF vs FDS6575 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7306TRPBF sa pamamagitan ng Infineon at FDS6575 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7306TRPBF FDS6575
Brand Infineon onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel (dual) P-Channel
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C -10 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) PowerTrench (rugged gate)
Hanay ng Temperature na Operasyon -55°C to +150°C (junction) [DATA_NEEDED: operating temperature range]
Packhaging 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) SOIC-8 (SO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Level ng MSL 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Drain-Source Voltage (VDS) — -20 V
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Threshold na Voltage ng Gate — [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]
Tindminan RoHS — Compliant

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