IRF7306TRPBF vs FDS6575 Perbandingan
Perbandingan bersamaan detil IRF7306TRPBF dari Infineon dan FDS6575 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7306TRPBF | FDS6575 |
|---|---|---|
| Merek | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel (dual) | P-Channel |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | -10 A |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | PowerTrench (rugged gate) |
| Rentang Suhu Kerja | -55°C to +150°C (junction) | [DATA_NEEDED: operating temperature range] |
| Paket | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | SOIC-8 (SO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| Drain-Source Voltage (VDS) | — | -20 V |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| Tegangan Batas Gerbang | — | [DATA_NEEDED: gate threshold voltage range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |
| Status RoHS | — | Compliant |