IRF7306TRPBF vs FDS6575 तुलना
विस्तृत दोनों ओर की तुलना IRF7306TRPBF द्वारा Infineon और FDS6575 द्वारा onsemi. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF7306TRPBF | FDS6575 |
|---|---|---|
| ब्रांड | Infineon | onsemi |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Polarity | P-Channel (dual) | P-Channel |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -3.6 A at 25°C | -10 A |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | PowerTrench (rugged gate) |
| ऑपरेटिंग तापमान रेंज | -55°C to +150°C (junction) | [DATA_NEEDED: operating temperature range] |
| पैकेज | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | SOIC-8 (SO-8) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| MSL स्तर | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| Drain-Source Voltage (VDS) | — | -20 V |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| गेट थ्रेशोल्ड वोल्टेज | — | [DATA_NEEDED: gate threshold voltage range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |
| RoHS स्थिति | — | Compliant |