K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
MPN: K4RAH165VB-BCQK ✓ نشطK4RAH165VB-BCQK نظرة عامة
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR memory hierarchy, succeeding DDR4 in servers, PCs, and embedded systems. Within the memory taxonomy it sits under DRAM -> synchronous DRAM -> DDR SDRAM -> DDR5, providing higher bandwidth, bank-group architecture, and lower operating voltage per generation.
Key features include on-die ECC (error correction code) for improved data reliability, CRC and write leveling functions for signal integrity at high data rates, auto self-refresh and asynchronous reset for power and control flexibility, and ZQ calibration for output driver impedance accuracy. The operating temperature range is 0C to +85C.
Technically, the device implements the DDR5 bank-group architecture with independent bank group activation, an on-die termination scheme, and DLL-enabled mode timing as described in the Samsung 16Gb DDR5 datasheet (Rev 1.x series). The 1.1V VDD reduces power consumption by roughly 30% versus DDR4 at comparable speeds, while the x16 organization allows 16-bit-wide memory channels in space-constrained designs.
Typical applications include DDR5 memory modules (UDIMM/SODIMM Downgraded DRAM tiers), desktop and notebook computing platforms, networking equipment, and advanced embedded controller systems requiring high-density memory.
Design consideration: DDR5 requires a dedicated PMIC (5V auxiliary power management IC) on the module and precise length-matched routing; verify controller compatibility with 4800 Mbps speed bins and on-die ECC behavior in your memory initialization code.
This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ K4RAH165VB-BCQK — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4RAH165VB-BCQK (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Interface, Density, Operating Temperature.
K4RAH165VB-BCWM
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4RAH086VB-BCQK
✅ بديل مباشر✓ متوفر في المخزون
$41.0156 / وحدة
عرض ورقة البيانات ←K4RAH086VP-BCWM
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H58G76BK8VX106N
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
H58G78CK8BX185N
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
K4RAH165VB-BCQK الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR5 SDRAM |
| حجم الذاكرة | 16 Gb |
| Memory Organization | 1G x 16 |
| Memory Interface | Parallel |
| معدل البيانات | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V |
| Error Correction | On-die ECC |
| الميزات | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| درجة حرارة التشغيل | 0C to +85C |
| العلبة | 106-ball FBGA |
| نوع التركيب | Surface Mount |
| Memory Format | DRAM (volatile) |
| Packaging | Tray |
| حالة دورة الحياة | Active |
دليل تكوين أطراف K4RAH165VB-BCQK 106-ball fbga
تكوين الأطراف لـ K4RAH165VB-BCQK (حزمة 106-ball fbga). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ K4RAH165VB-BCQK.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
K4RAH165VB-BCQK مناسب لـ 6 التطبيقs: DDR5 Memory Modules (UDIMM/SODIMM), Desktop and Notebook Computing Platforms, Networking and Communication Equipment, Server and Data Center Memory, Advanced Embedded and Industrial Controllers, Consumer Electronics and Smart Devices.
DDR5 Memory Modules (UDIMM/SODIMM)
The K4RAH165VB-BCQK is a core building block for DDR5 UDIMM and SODIMM modules in desktop and notebook computing. Its 16Gb density in a 1G x 16 organization lets module makers reach high capacities with fewer devices - eight x16 chips yield a 16GB module with a 128-bit-wide main channel when paired across ranks. Samsung's on-die ECC improves module-level reliability without host overhead, while write leveling and ZQ calibration ensure signal integrity at 4800 Mbps. DDR5 modules additionally require the on-module 5V auxiliary PMIC for DCA/DFE power, simplifying motherboard power design. Because the 106-ball FBGA footprint is shared across Samsung, SK Hynix, and Micron x16 DDR5 parts, module designers can implement dual-sourcing on a single PCB.
موصى به
Desktop and Notebook Computing Platforms
PC platforms with Intel or AMD DDR5 memory controllers use the K4RAH165VB-BCQK for soldered-down memory or module integration. The 1.1V VDD cuts memory subsystem power versus DDR4 by roughly 30% at comparable throughput (per Samsung's DDR5 family data), directly extending battery runtime in notebooks and reducing thermal load in small-form-factor desktops. The x16 organization suits cost-optimized consumer designs that avoid full x8 ECC channel widths, and 4800 Mbps operation matches mainstream JEDEC DDR5 speed bins supported by current chipsets. Board designers should follow Samsung's routing guidelines for length matching and on-die termination settings during memory training to achieve stable operation at rated speed across the 0C to +85C commercial temperature range.
موصى به
Networking and Communication Equipment
Switches, routers, and 5G infrastructure line cards require large, high-bandwidth buffer memory, making the 16Gb DDR5 K4RAH165VB-BCQK a strong fit. The 1G x 16 organization with 4800 Mbps data rate provides 9.6 GB/s peak bandwidth per device, sufficient for deep packet buffers at multi-gigabit line rates. CRC and on-die ECC address the bit-error sensitivity of long, high-speed memory buses in electrically noisy rack environments, and the asynchronous reset function simplifies system-level power sequencing and fault recovery. Sourcememorychips explicitly positions this Samsung DDR5 device for server, networking, and advanced embedded applications requiring stable long-term supply. Verify controller support for DDR5 training algorithms and plan for industrial temperature requirements if the deployment environment exceeds the 0C to +85C commercial range.
موصى به
Server and Data Center Memory
Data center platforms benefit from the K4RAH165VB-BCQK's combination of 16Gb density and DDR5 efficiency. Samsung's DDR5 family delivers up to 7200 Mbps at the top of its range and roughly 30% better power efficiency than DDR4, reducing the per-GB energy cost of large memory pools - a key total-cost-of-ownership metric at hyperscale. On-die ECC improves RAS characteristics in dense deployments, while CRC protects data integrity at high bus speeds. The BCQK speed/temperature class targets mainstream server channels; higher-class suffixes exist for performance tiers. When designing server DIMMs, coordinate the on-module PMIC with host power management and validate memory training across population configurations, since DDR5 introduces per-channel sub-channel architecture that changes training topology versus DDR4.
موصى به
Advanced Embedded and Industrial Controllers
High-performance embedded systems - industrial PCs, edge AI gateways, and test instruments - adopt the K4RAH165VB-BCQK where DDR4 bandwidth is exhausted. The DDR5 interface at 4800 Mbps gives embedded SoCs and FPGA-based controllers substantially more memory bandwidth per pin, and the x16 organization halves the component count versus x8 parts at equal capacity, simplifying layout on dense boards. Auto self-refresh supports low-power standby states in intermittently active edge devices, and ZQ calibration maintains output impedance accuracy across the 0C to +85C operating range typical of commercial-grade industrial environments. For industrial designs, confirm long-term availability and traceability with your distributor - LimChip notes buyers commonly source this exact Samsung suffix to keep manufacturer consistency across DDR-based industrial platforms.
موصى به
Consumer Electronics and Smart Devices
Set-top boxes, smart displays, gaming peripherals, and high-definition video devices use the K4RAH165VB-BCQK when 4K/8K media pipelines need substantial frame-buffer memory. Sixteen gigabits per chip allows 2 GB of system memory with a single rank of eight x16 devices, minimizing BOM cost and PCB area - critical in compact consumer housings. The 1.1V supply reduces overall platform power for energy-regulation compliance, and DDR5's bank-group architecture sustains the random-access patterns typical of video decode and UI compositing workloads. Samsung's high-volume DDR5 production ensures consumer-grade pricing and supply continuity, while on-die ECC quietly improves field reliability without host firmware changes. Commercial temperature rating (0C to +85C) covers typical indoor consumer operating environments.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4RAH165VB-BCQK — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4RAH165VB-BCWM | K4RAH086VB-BCQK | K4RAH086VP-BCWM | H58G76BK8VX106N | H58G78CK8BX185N |
|---|---|---|---|---|---|---|
| Package | 106-ball FBGA | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | SK Hynix |
| Memory Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb | 8 Gb | 8 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 512M x 16 | 512M x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| On-die ECC | Yes | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Full 16Gb density in x16 organization (مقابلK4RAH086VB-BCQK)
- DDR5 power efficiency with on-die ECC (مقابلK4A4G165WF-BCTD)
- Cross-brand second source on same footprint (مقابلH58G76BK8VX106N)
ملاحظات التصميم
DDR5 memory routing at 4800 Mbps demands strict fly-by topology for address/command and length-matched data groups. Keep DQ/DQS/DM traces length-matched within tight intra-byte-group skew limits, reference continuous ground planes, and follow the Samsung DDR5 design guide for on-die termination (ODT) settings. For soldered-down x16 designs, maintain solid 1.1V power planes with dense via stitching from the FBGA ball field to the plane to minimize simultaneous switching noise during burst writes.
The K4RAH165VB-BCQK operates from a nominal 1.1V VDD; provide a low-noise regulator with adequate transient response for burst refresh and activate currents. Estimated: with 16Gb x16 devices at 4800 Mbps, peak per-device current during activation bursts can reach ampere-class transients, so local bulk (22-47 uF) plus high-frequency (0.1 uF per device) decoupling is recommended. DDR5 DIMM applications must also implement the on-module 5V auxiliary PMIC per the DDR5 standard; verify the PMIC's VDDQ tracking and power-fault behavior.
Do not substitute DDR4 parts (e.g., K4A4G165WF series) into DDR5 sockets - DDR5 uses different command encoding, sub-channel architecture, on-die ECC, and training sequences, and is not pin-compatible despite similar footprints. After any second-source change (Samsung to SK Hynix), re-run full DDR5 memory training in firmware since training algorithm behavior differs by vendor. Also confirm the suffix speed bin matches your controller configuration: BCQK and BCWM encode different speed/temperature classes within the same die family.
معلومات الامتثال
Compliance declarations were not explicitly present in the verified web data for this specific suffix as of 2026-09-04; confirm via LCSC product page C5359119 or Samsung environmental documentation.
