H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
MPN: H5TC4G63CFR-PBL ✓ نشطH5TC4G63CFR-PBL نظرة عامة
DDR3L SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, doubling the data rate compared to single data rate SDRAM. The 'L' denotes low voltage operation at 1.35V, reducing power consumption by about 15% compared to standard DDR3 at 1.5V. This makes DDR3L a preferred choice for battery-powered and thermally constrained designs.
Key features of the H5TC4G63CFR-PBL include a data rate of 1600 Mbps (PC3L-12800), a burst length of 8, and support for on-die termination (ODT) and posted CAS. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8 us at 85C. The 96-ball FBGA package provides a compact footprint suitable for high-density PCB layouts.
The H5TC4G63CFR-PBL uses a high-performance CMOS process technology, ensuring fast access times and low power consumption. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge operations. The device supports a programmable CAS latency of 11, 12, and 13, allowing flexibility in system timing.
Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment such as routers and switches, and industrial automation controllers. The low voltage and high bandwidth make it suitable for applications requiring high memory density and low power.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
بدائل مباشرة لـ H5TC4G63CFR-PBL — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5TC4G63CFR-PBL (نفس عامل الشكل والبصمة) — يختلف في Package, Burst Length, Data Rate, CAS Latency, Supply Voltage.
H5TC4G63CFR-PBA
✅ بديل مباشر✗ غير متوفر
$6.23 / وحدة
عرض ورقة البيانات ←H5TC4G63AFR-PBR
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$5.9091 / وحدة
عرض ورقة البيانات ←H5TC4G63MFR-PBA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BCK00
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←NT5CC256M16DP-DI
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-PBL الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4 Gb (256M x 16) |
| جهد التغذية | 1.35 V |
| معدل البيانات | 1600 Mbps (PC3L-12800) |
| العلبة | 96-ball FBGA (TFBGA) |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| Terminal Form | BALL |
| Burst Length | 8 |
| زمن الوصول CAS | 11, 12, 13 |
| Number of Banks | 8 |
| Refresh Period | 7.8 us at 85C |
| RoHS | Compliant |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
تكوين أطراف H5TC4G63CFR-PBL
| دبوس A1 | VDD — Power supply for core logic |
| دبوس A2 | VSS — Ground |
| دبوس B1 | DQ0 — Data input/output 0 |
| دبوس B2 | DQ1 — Data input/output 1 |
| دبوس C1 | VDDQ — Power supply for output buffers |
| دبوس C2 | VSSQ — Ground for output buffers |
| دبوس D1 | DQ2 — Data input/output 2 |
| دبوس D2 | DQ3 — Data input/output 3 |
| دبوس E1 | A0 — Address input 0 |
| دبوس E2 | A1 — Address input 1 |
| دبوس F1 | BA0 — Bank address 0 |
| دبوس F2 | BA1 — Bank address 1 |
| دبوس G1 | CK — Clock input |
| دبوس G2 | CK# — Complementary clock input |
| دبوس H1 | CKE — Clock enable |
| دبوس H2 | CS# — Chip select |
التطبيقات النموذجية
H5TC4G63CFR-PBL مناسب لـ 6 التطبيقs: Mobile Devices, Embedded Systems, Networking Equipment, Laptops and Ultrabooks, Industrial Automation, Automotive Infotainment.
Mobile Devices
The H5TC4G63CFR-PBL's low 1.35V operation and compact 96-ball FBGA package make it ideal for smartphones and tablets where power efficiency and board space are critical. Its 1600 Mbps data rate supports smooth multitasking and multimedia performance while extending battery life.
موصى به
Embedded Systems
In embedded systems such as industrial controllers and IoT gateways, the H5TC4G63CFR-PBL provides high memory density with low power consumption. Its 8-bank architecture and programmable CAS latency allow optimization for real-time tasks, while the 1.35V supply reduces thermal load in enclosed environments.
موصى به
Networking Equipment
Routers, switches, and network appliances benefit from the H5TC4G63CFR-PBL's high bandwidth and low power. The 1600 Mbps data rate handles packet buffering and routing tables efficiently, while the 1.35V operation reduces power dissipation in always-on networking hardware.
موصى به
Laptops and Ultrabooks
The H5TC4G63CFR-PBL is suitable for main memory in laptops and ultrabooks, offering 4Gb capacity in a small footprint. Its low voltage and self-refresh modes help extend battery life during idle periods, while the high data rate supports demanding applications like video editing and gaming.
موصى به
Industrial Automation
In industrial automation controllers, the H5TC4G63CFR-PBL provides reliable memory operation over a wide temperature range. Its robust design and low power consumption make it suitable for factory floor environments where heat and vibration are concerns.
موصى به
Automotive Infotainment
The H5TC4G63CFR-PBL can be used in automotive infotainment systems, providing high memory bandwidth for navigation, multimedia, and connectivity features. Its low voltage operation helps manage thermal constraints in vehicle cabins.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5TC4G63CFR-PBL — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5TC4G63CFR-PBA | H5TC4G63AFR-PBR | K4B4G1646D-BCK00 |
|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Low voltage operation at 1.35V (مقابلK4B4G1646D-BCK00)
- High data rate of 1600 Mbps (مقابلH5TC4G63CFR-PBA)
- RoHS compliant and halogen-free (مقابلMT41K256M16HA-125)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and follow JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
The H5TC4G63CFR-PBL operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within the specified range, especially during heavy memory access.
For data rates of 1600 Mbps, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors and avoid stubs to reduce reflections and crosstalk.
معلومات الامتثال
Lead-free and halogen-free per datasheet. RoHS compliant.
