NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
MPN: NT5AD512M16C4-JRI ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $94.46 | $94.46 |
| 10 | $89.74 | $897.40 |
| 100 | $85.02 | $8,502.00 |
| 500 | $80.3 | $40,150.00 |
| 1,000 | $75.58 | $75,580.00 |
NT5AD512M16C4-JRI نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and provides higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through features like on-die termination (ODT) and write leveling. DDR4 is a critical component in modern computing systems, from servers and desktops to embedded and industrial applications.
Key features of the NT5AD512M16C4-JRI include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance reliability and performance in demanding environments. The device supports an operating temperature range of -40°C to +95°C, making it suitable for industrial applications.
The NT5AD512M16C4-JRI utilizes advanced CMOS technology and a 96-ball TFBGA package, which offers excellent thermal and electrical performance. The built-in temperature sensor enables efficient thermal management, while the ZQ calibration ensures optimal signal integrity. The CRC function provides error detection for data integrity, which is crucial for mission-critical systems.
Typical applications include data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. Its high density and speed make it ideal for networking equipment, servers, and high-performance embedded systems. The wide temperature range and robust feature set ensure reliable operation in harsh environments.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including matched trace lengths and proper termination.
بدائل مباشرة لـ NT5AD512M16C4-JRI — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5AD512M16C4-JRI (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Supply Voltage, Density, Operating Temperature.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
NT5AD512M16C4-HRI
✓ متوفر في المخزون
$45.9375 / وحدة
عرض ورقة البيانات ←NT5AD512M16C4-JR
✗ غير متوفر
$73.75 / وحدة
عرض ورقة البيانات ←MT40A512M16JY-07EAIT:B
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G165WB-BIWE
تواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G6NDJR-XNC
✗ غير متوفر
$55.6818 / وحدة
عرض ورقة البيانات ←NT5AD512M16C4-JRI الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| Memory Density | 8 Gbit |
| التنظيم | 512M x 16 |
| معدل البيانات | 3200 Mbps (DDR4-3200) |
| جهد التغذية | 1.2 V |
| نطاق درجة حرارة التشغيل | -40°C to +95°C |
| العلبة | TFBGA-96 |
| نوع التركيب | Surface Mount |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
تكوين أطراف NT5AD512M16C4-JRI
| دبوس A1 | VDD — Power supply (1.2V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | A0 — Address input 0 |
| دبوس E2 | A1 — Address input 1 |
| دبوس E3 | A2 — Address input 2 |
| دبوس F1 | A3 — Address input 3 |
| دبوس F2 | A4 — Address input 4 |
| دبوس F3 | A5 — Address input 5 |
| دبوس G1 | A6 — Address input 6 |
| دبوس G2 | A7 — Address input 7 |
| دبوس G3 | A8 — Address input 8 |
| دبوس H1 | A9 — Address input 9 |
| دبوس H2 | A10/AP — Address input 10 / Auto-precharge |
| دبوس H3 | A11 — Address input 11 |
| دبوس J1 | A12/BC — Address input 12 / Burst chop |
| دبوس J2 | A13 — Address input 13 |
| دبوس J3 | A14 — Address input 14 |
| دبوس K1 | A15 — Address input 15 |
| دبوس K2 | A16 — Address input 16 |
| دبوس K3 | A17 — Address input 17 |
| دبوس L1 | BA0 — Bank address 0 |
| دبوس L2 | BA1 — Bank address 1 |
| دبوس L3 | BA2 — Bank address 2 |
| دبوس M1 | BG0 — Bank group 0 |
| دبوس M2 | BG1 — Bank group 1 |
| دبوس M3 | CK — Clock input |
| دبوس N1 | CK# — Complementary clock input |
| دبوس N2 | CKE — Clock enable |
| دبوس N3 | CS# — Chip select |
| دبوس P1 | RAS# — Row address strobe |
| دبوس P2 | CAS# — Column address strobe |
| دبوس P3 | WE# — Write enable |
| دبوس R1 | ODT — On-die termination |
| دبوس R2 | RESET# — Reset |
| دبوس R3 | ZQ — Calibration reference |
| دبوس T1 | DM0 — Data mask 0 |
| دبوس T2 | DQS0 — Data strobe 0 |
| دبوس T3 | DQS0# — Complementary data strobe 0 |
التطبيقات النموذجية
NT5AD512M16C4-JRI مناسب لـ 6 التطبيقs: Industrial Controllers, Networking Equipment, Embedded Computing Modules, Data Storage Systems, Automotive Infotainment, Medical Devices.
Industrial Controllers
The NT5AD512M16C4-JRI's industrial temperature range (-40°C to +95°C) and high reliability features like CRC and auto self-refresh make it ideal for PLCs and industrial PCs. Its 8Gb density supports complex control algorithms and data logging. The 1.2V operation reduces power consumption in always-on systems, while the TFBGA-96 package allows compact PCB designs. With DDR4-3200 speed, it handles real-time data processing efficiently, ensuring smooth operation in factory automation and process control.
موصى به
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-JRI provides high-bandwidth memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency packet processing, while the 8Gb capacity supports large forwarding databases. The built-in temperature sensor and auto self-refresh enhance reliability in 24/7 operation. The 1.2V supply reduces power dissipation in dense line cards, and the TFBGA-96 package enables high-density board layouts.
موصى به
Embedded Computing Modules
The NT5AD512M16C4-JRI is well-suited for embedded computing modules like COM Express and Qseven. Its 8Gb density provides ample memory for operating systems and applications, while the DDR4-3200 speed ensures fast data access. The industrial temperature grade allows deployment in outdoor and automotive environments. The 1.2V operation is efficient for battery-powered devices, and the small TFBGA-96 package fits space-constrained designs. Features like write leveling and dynamic ODT improve signal integrity in multi-rank configurations.
موصى به
Data Storage Systems
In SSDs, NAS, and RAID controllers, the NT5AD512M16C4-JRI serves as cache memory, accelerating data access and improving throughput. Its high speed (DDR4-3200) and 8Gb capacity enable large cache pools, while the CRC function ensures data integrity. The auto self-refresh and temperature sensor help manage thermal stress in high-activity storage environments. The 1.2V supply reduces power consumption in always-on storage arrays, and the TFBGA-96 package supports compact drive designs.
موصى به
Automotive Infotainment
The NT5AD512M16C4-JRI's wide temperature range and reliability features make it suitable for automotive infotainment systems, including head units and digital clusters. Its 8Gb density supports navigation maps, multimedia playback, and instrument cluster graphics. The DDR4-3200 speed ensures smooth rendering and fast boot times. The 1.2V operation is compatible with automotive power rails, and the TFBGA-96 package withstands vibration and thermal cycling. Features like auto precharge and data mask enhance performance in real-time graphics.
موصى به
Medical Devices
In medical imaging, patient monitors, and diagnostic equipment, the NT5AD512M16C4-JRI provides reliable high-speed memory for data acquisition and processing. Its industrial temperature range ensures operation in clinical environments, while the CRC function safeguards critical patient data. The 8Gb capacity supports large image buffers and complex algorithms. The 1.2V supply is suitable for low-power medical devices, and the TFBGA-96 package allows compact designs for portable equipment. Auto self-refresh maintains data integrity during standby.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5AD512M16C4-JRI — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5AD512M16C4-HRI | NT5AD512M16C4-JR | MT40A512M16JY-07EAIT | K4A8G165WB-BIWE | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | B: TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | B: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Density | 8 Gbit | 8 Gbit | 8 Gbit | B: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | B: 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | B: 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | B: 1.2 V | 1.2 V | 1.2 V |
| CRC Function | Yes | Yes | Yes | B: Yes | Yes | Yes |
أبرز الفروقات
- Industrial temperature range (-40°C to +95°C) (مقابلNT5AD512M16C4-JR)
- Same-brand drop-in compatibility (مقابلNT5AD512M16C4-HRI)
- Cross-brand availability (مقابلMT40A512M16JY-07EAIT:B)
ملاحظات التصميم
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for address/control and 5 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane beneath the memory device to minimize noise.
The NT5AD512M16C4-JRI operates up to +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal pad; connect it to a large copper pour for heat dissipation. Monitor temperature using the built-in temperature sensor for dynamic thermal management.
Use the ZQ pin with a 240-ohm resistor to ground for calibration. Implement write leveling and dynamic ODT as per DDR4 specifications to improve signal integrity. Keep DQS/DQS# pairs tightly coupled and avoid vias on high-speed signals where possible. Follow JEDEC DDR4 layout guidelines for optimal performance.
معلومات الامتثال
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
