NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
MPN: NT5AD512M16A4-GZ ✓ نشطNT5AD512M16A4-GZ نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
بدائل مباشرة لـ NT5AD512M16A4-GZ — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5AD512M16A4-GZ (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
NT5AD512M16C4-JRI
✅ بديل مباشر✓ متوفر في المخزون
$75.58 / وحدة
عرض ورقة البيانات ←NT5AD512M16A4-HR
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5AD512M16
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A512M16JY-075E
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G165WB-BCWE
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✓ متوفر في المخزون
$6.55 / وحدة
عرض ورقة البيانات ←H5AN8G6NDJR
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5AD512M16A4-GZ الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| التنظيم | 512M x 16 |
| Density | 8Gb |
| جهد التغذية | 1.2V |
| أقصى تردد للساعة | 1200 MHz |
| عرض ناقل البيانات | 16 bits |
| العلبة | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| نطاق درجة حرارة التشغيل | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
تكوين أطراف NT5AD512M16A4-GZ
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — Power supply for output buffers |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — Ground for output buffers |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | VDD — Power supply |
| دبوس E2 | DQS0 — Data strobe 0 |
| دبوس E3 | DQS0# — Data strobe 0 complement |
| دبوس F1 | VSS — Ground |
| دبوس F2 | DM0 — Data mask 0 |
| دبوس F3 | VDDQ — Power supply for output buffers |
| دبوس G1 | VSSQ — Ground for output buffers |
| دبوس G2 | CK — Clock input |
| دبوس G3 | CK# — Clock input complement |
| دبوس H1 | VDD — Power supply |
| دبوس H2 | CKE — Clock enable |
| دبوس H3 | CS# — Chip select |
| دبوس J1 | VSS — Ground |
| دبوس J2 | RAS# — Row address strobe |
| دبوس J3 | CAS# — Column address strobe |
| دبوس K1 | VDDQ — Power supply for output buffers |
| دبوس K2 | WE# — Write enable |
| دبوس K3 | A0 — Address input 0 |
| دبوس L1 | VSSQ — Ground for output buffers |
| دبوس L2 | A1 — Address input 1 |
| دبوس L3 | A2 — Address input 2 |
| دبوس M1 | VDD — Power supply |
| دبوس M2 | A3 — Address input 3 |
| دبوس M3 | A4 — Address input 4 |
| دبوس N1 | VSS — Ground |
| دبوس N2 | A5 — Address input 5 |
| دبوس N3 | A6 — Address input 6 |
| دبوس P1 | VDDQ — Power supply for output buffers |
| دبوس P2 | A7 — Address input 7 |
| دبوس P3 | A8 — Address input 8 |
| دبوس R1 | VSSQ — Ground for output buffers |
| دبوس R2 | A9 — Address input 9 |
| دبوس R3 | A10/AP — Address input 10 / Auto precharge |
| دبوس T1 | VDD — Power supply |
| دبوس T2 | A11 — Address input 11 |
| دبوس T3 | A12/BC# — Address input 12 / Burst chop |
| دبوس U1 | VSS — Ground |
| دبوس U2 | A13 — Address input 13 |
| دبوس U3 | A14 — Address input 14 |
| دبوس V1 | VDDQ — Power supply for output buffers |
| دبوس V2 | A15 — Address input 15 |
| دبوس V3 | BA0 — Bank address 0 |
| دبوس W1 | VSSQ — Ground for output buffers |
| دبوس W2 | BA1 — Bank address 1 |
| دبوس W3 | BA2 — Bank address 2 |
| دبوس Y1 | VDD — Power supply |
| دبوس Y2 | BG0 — Bank group 0 |
| دبوس Y3 | BG1 — Bank group 1 |
| دبوس AA1 | VSS — Ground |
| دبوس AA2 | ACT# — Activate command |
| دبوس AA3 | PAR — Parity input |
| دبوس AB1 | VDDQ — Power supply for output buffers |
| دبوس AB2 | ALERT# — Alert output |
| دبوس AB3 | RESET# — Reset input |
| دبوس AC1 | VSSQ — Ground for output buffers |
| دبوس AC2 | TEN — Temperature sensor enable |
| دبوس AC3 | ZQ — Calibration reference |
| دبوس AD1 | VDD — Power supply |
| دبوس AD2 | VREFCA — Reference voltage for command/address |
| دبوس AD3 | VTT — Termination voltage |
التطبيقات النموذجية
NT5AD512M16A4-GZ مناسب لـ 6 التطبيقs: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
موصى به
Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
موصى به
Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
موصى به
Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
موصى به
Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
موصى به
Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5AD512M16A4-GZ — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Industrial temperature range support (مقابلMT40A512M16JY-075E)
- Same-brand availability (مقابلK4A8G165WB-BCWE)
- Built-in temperature sensor (مقابلH5AN8G6NDJR)
ملاحظات التصميم
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
معلومات الامتثال
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
