1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 比較

詳細並排比較 1ED020I12B2XUMA1 由 Infineon 與 1EDI60H12AHXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1ED020I12B2XUMA1 1EDI60H12AHXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封裝 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Creepage Distance 8 mm 8 mm
工作溫度 -40 °C to +125 °C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-3 (per JEDEC J-STD-020) 2 (1 year floor life)
Compliance RoHS compliant —
Product Type — Single-channel high-side gate driver IC
Isolation Voltage Rating — 1200 V
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
輸出配置 — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Short-Circuit Protection — Short-circuit clamping
RoHS 狀態 — Compliant

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