1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED020I12B2XUMA1 disebabkan oleh Infineon dan 1EDI60H12AHXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED020I12B2XUMA1 1EDI60H12AHXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
Kemasan PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Creepage Distance 8 mm 8 mm
Suhu Operasi -40 °C to +125 °C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL-3 (per JEDEC J-STD-020) 2 (1 year floor life)
Compliance RoHS compliant —
Product Type — Single-channel high-side gate driver IC
Isolation Voltage Rating — 1200 V
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
Konfigurasi Output — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Short-Circuit Protection — Short-circuit clamping
Status RoHS — Compliant

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