1ED3122MC12HXUMA1 vs 1EDI60H12AHXUMA1 Perbandingan
Perbandingan bersamaan detil 1ED3122MC12HXUMA1 dari Infineon dan 1EDI60H12AHXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | 1ED3122MC12HXUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Isolated Gate Driver (single-channel) | Single-channel high-side gate driver IC |
| Isolation Technology | Coreless Transformer (CT) | Galvanic isolation via coreless transformer |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | 1 |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | — |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | — |
| Suhu Kerja | -40 C to +125 C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Paket | PG-DSO-8-66 (300-mil DSO-8) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 2 | 2 (1 year floor life) |
| Status RoHS | Compliant | Compliant |
| Isolation Voltage Rating | — | 1200 V |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| Konfigurasi Output | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Creepage Distance | — | 8 mm |
| Short-Circuit Protection | — | Short-circuit clamping |