1EDN7136UXTSA1 vs 2EDN8533RXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7136UXTSA1 dari Infineon dan 2EDN8533RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7136UXTSA1 2EDN8533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Jumlah Output 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) Yes (VCC UVLO)
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Rentang Suhu Kerja -40 C to +150 C [DATA_NEEDED: operating temperature]
Paket TSNP-6 with exposed pad (PG-VSON-1) PG-TSSOP-8 (exposed pad)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (per Infineon product page)
Lead-Free Yes —
Bebas Halogen Yes (per Infineon product family convention) —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Number of Channels — 2
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)

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