2ED2108S06FXUMA1 vs 2ED2106S06FXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2108S06FXUMA1 sa pamamagitan ng Infineon at 2ED2106S06FXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED2108S06FXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2ED2108S06FXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 1 | 2 |
| Gate Type | N-Channel MOSFET, IGBT | — |
| Bilang ng Outputs | 2 (high-side + low-side) | 2 (1 high-side, 1 low-side) |
| Logic Input | Non-Inverting | — |
| Input Voltage (VCC) | 10 V to 20 V | — |
| High-Side Bootstrap Voltage Rating | 650 V | — |
| Peak Source Current (typ.) | 0.29 A | — |
| Peak Sink Current (typ.) | 0.7 A | — |
| Integrated Bootstrap Diode | Yes | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay ns] | 100 ns |
| Rise / Fall Time (typ.) | [DATA_NEEDED: tr/tf ns] | — |
| Temperature na Operasyon | -40 C to +125 C | — |
| Packhaging | PG-DSO-8-53 (DSO-8) | PG-DSO-8-69 (DSO-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | — |
| Offset Voltage (Voffset max) | — | 650 V |
| Configuration | — | High-Side and Low-Side (Half-Bridge) |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Input Logic Compatibility | — | CMOS, TTL |
| Bilang ng Pins | — | 8 |
| Bootstrap Diode | — | Integrated |
| Hanay ng Temperature na Operasyon | — | -40C to +125C |
| Packaging | — | Tape & Reel |
| Type ng Output | — | Half-Bridge, Non-Inverting |