2ED2108S06FXUMA1 vs 2ED2106S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2108S06FXUMA1 dari Infineon dan 2ED2106S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2108S06FXUMA1 2ED2106S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 2
Gate Type N-Channel MOSFET, IGBT —
Jumlah Output 2 (high-side + low-side) 2 (1 high-side, 1 low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] 100 ns
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8-53 (DSO-8) PG-DSO-8-69 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant —
Offset Voltage (Voffset max) — 650 V
Configuration — High-Side and Low-Side (Half-Bridge)
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
Jumlah Pin — 8
Bootstrap Diode — Integrated
Rentang Suhu Kerja — -40C to +125C
Packaging — Tape & Reel
Tipe Output — Half-Bridge, Non-Inverting

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