2ED2108S06FXUMA1 vs 2ED2106S06FXUMA1 比較

詳細並排比較 2ED2108S06FXUMA1 由 Infineon 與 2ED2106S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 啟用中
Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2108S06FXUMA1 2ED2106S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge —
Number of Drivers 1 2
Gate Type N-Channel MOSFET, IGBT —
輸出數量 2 (high-side + low-side) 2 (1 high-side, 1 low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] 100 ns
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
工作溫度 -40 C to +125 C —
封裝 PG-DSO-8-53 (DSO-8) PG-DSO-8-69 (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 —
RoHS 狀態 Compliant —
Offset Voltage (Voffset max) — 650 V
Configuration — High-Side and Low-Side (Half-Bridge)
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
腳位數 — 8
Bootstrap Diode — Integrated
工作溫度範圍 — -40C to +125C
Packaging — Tape & Reel
輸出類型 — Half-Bridge, Non-Inverting

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