2ED21834S06JXUMA1 vs 2ED2183S06FXUMA1 Comparison

Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and 2ED2183S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED21834S06JXUMA1 2ED2183S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) High Side, Low Side, Non-Inverting
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage SOI (Silicon-On-Insulator)
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Package PG-DSO-14-49 (DSO-14) PG-DSO-8-53 (DSO-8)
Number of Pins 14 —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 °C to +125 °C —
RoHS Status Compliant Compliant
Standard Reel Quantity 3000 —
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
Number of Outputs — 1 (half-bridge: high-side + low-side)
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Rise Time — 15 ns
Fall Time — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
Operating Temperature — -40 C to +125 C
MSL Level — 2
Terminal Finish — Tin (e3 per JESD-609)

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