2EDN8534FXTMA1 vs 2EDN7524GXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDN8534FXTMA1 disebabkan oleh Infineon dan 2EDN7524GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | 2EDN8534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Dual Low-Side Gate Driver | — |
| Number of Channels | 2 | 2 (dual) |
| Konfigurasi Output | Non-Inverting | — |
| Peak Source/Sink Current | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay (Typ) | 19 ns | — |
| Channel-to-Channel Delay Match | 1 ns (typ) | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | -10 V to +20 V on logic pins |
| Active Miller Clamp | Yes (internal) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Gambaran Suhu Operasi | -40 C to +125 C | — |
| Kemasan | PG-DSO-8 (DSO-8) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | EiceDRIVER 2EDN | — |
| Product Type | — | Low-side gate driver IC |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Masa Pertambahan | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Masa jatuh | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Suhu Operasi | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |